ArticleNature communications2025
In situ n-doped nanocrystalline electron-injection-layer for general-lighting quantum-dot LEDs.
Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
6 citing papers in PubMed.
- Controlling the shell growth mechanism and interfacial oxidation of InAs/ZnSe quantum dots for shortwave infrared emission.Nature communications · 2026Article
- Morphological and chemical changes in Cd-free colloidal QD-LEDs during operation.Science advances · 2026Article
- Positive Aging-Free Quantum Dot Light-Emitting Diodes Enabled by Single-Source Chloride-Doped ZnMgO Electron Transport Layers.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- Selective radial thickness growth of compositionally graded shells on colloidal quantum rods for more efficient light-emitting diodes.Nature communications · 2026Article
- Thermodynamically guided kilogram-scale precipitation of copper iodide clusters for efficient solution-processed light-emitting diodes.Science advances · 2026Article
- Challenges of II-VI and III-V Blue Quantum Dot Light-Emitting Diodes.Advanced materials (Deerfield Beach, Fla.) · 2026Review
Corrections and comments
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Authors and funding
12 authors.
Funding
Abstract
Quantum-dot optoelectronics, pivotal for lighting, lasing and photovoltaics, rely on nanocrystalline oxide electron-injection layer. Here, we discover that the prevalent surface magnesium-modified zinc oxide electron-injection layer possesses poor n-type attributes, leading to the suboptimal and encapsulation-resin-sensitive performance of quantum-dot light-emitting diodes. A heavily n-doped nanocrystalline electron-injection layer-exhibiting ohmic transport with 1000 times higher electron conductivity and improved hole blockage-is developed via a simple reductive treatment. The resulting sub-bandgap-driven quantum-dot light-emitting diodes exhibit optimal efficiency and extraordinarily-high brightness, surpassing current benchmarks by at least 2.6-fold, and reaching levels suitable for quantum-dot laser diodes with only modest bias. This breakthrough further empowers white-lighting quantum-dot light-emitting diodes to exceed the 2035 U.S. Department of Energy's targets for general lighting, which currently accounts for ~15% of global electricity consumption. Our work opens a door for understanding and optimizing carrier transport in nanocrystalline semiconductors shared by various types of solution-processed optoelectronic devices.
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.