Evidence map›Paper›PMID 40178333›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2025

Area-Selective Atomic Layer Deposition on Homogeneous Substrate for Next-Generation Electronic Devices.

Min-Jeong Rhee, Byoungjun Won, Young-Jin Lim, Jeong-Gyu Song, Sunghyun Kim, Il-Kwon Oh

Abstract read
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Article
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Min-Jeong RheeDepartment of Intelligence Semiconductor Engineering, Ajou University, Suwon, 16499, Republic of Korea.
Byoungjun WonDepartment of Intelligence Semiconductor Engineering, Ajou University, Suwon, 16499, Republic of Korea.
Young-Jin LimDepartment of Intelligence Semiconductor Engineering, Ajou University, Suwon, 16499, Republic of Korea.
Jeong-Gyu SongDevice Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, 130 Samsung-ro, Suwon, Gyeonggi-do, 16678, Republic of Korea.
Sunghyun KimDevice Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, 130 Samsung-ro, Suwon, Gyeonggi-do, 16678, Republic of Korea.
Il-Kwon OhDepartment of Intelligence Semiconductor Engineering, Ajou University, Suwon, 16499, Republic of Korea.ORCID https://orcid.org/0000-0002-1266-3157

Funding

National Research Foundation of Korea 2023M3H4A6A01057927National Research Foundation of Korea RS-2024-00357895Samsung Advanced Institute of Technology
6 · The paper itself

Abstract

Area-selective atomic layer deposition (AS-ALD) has focused on controlling the promotion or blocking of precursor molecules on "heterogeneous" surfaces comprising different materials. This study proposes a new concept of AS-ALD on "homogeneous" surfaces comprising a single material. In this work, a homogeneous ZrO

Indexed as

area‐selective atomic layer depositiondielectricgrain boundaryhomogeneous surfaceleakage currents

Identifiers

PMID40178333
PMCPMC12165030

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.