Evidence map›Paper›PMID 40175726›Full record

ArticleNature materials2025

Giant nonlinear Raman responses from organic semiconductors.

Yi Jiang, He Lin, Jin-Qiang Pan, Jia-Ling Zhang, Hoi Lam Tam, King Fai Li, Qi Wei, Sheung Mei Ng, Chee Leung Mak, Yong Jie Huang and 9 more

Abstract read
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In one paragraph

Article in Nature materials, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

19 authors.

Yi Jiang *State Key Laboratory of Flexible Electronics (LoFE), Institute of Advanced Materials (IAM), School of Chemistry and Life Sciences, Nanjing University of Posts and Telecommunications, Nanjing, China.ORCID http://orcid.org/0000-0002-5422-7273
He Lin *State Key Laboratory of Flexible Electronics (LoFE), Institute of Advanced Materials (IAM), School of Chemistry and Life Sciences, Nanjing University of Posts and Telecommunications, Nanjing, China.
Jin-Qiang Pan *State Key Laboratory of Flexible Electronics (LoFE), Institute of Advanced Materials (IAM), School of Chemistry and Life Sciences, Nanjing University of Posts and Telecommunications, Nanjing, China.
Jia-Ling ZhangState Key Laboratory of Flexible Electronics (LoFE), Institute of Advanced Materials (IAM), School of Chemistry and Life Sciences, Nanjing University of Posts and Telecommunications, Nanjing, China.
Hoi Lam TamDepartment of Physics and Institute of Advanced Materials, Hong Kong Baptist University, Hong Kong SAR, China.
King Fai LiDepartment of Physics and Institute of Advanced Materials, Hong Kong Baptist University, Hong Kong SAR, China.
Qi WeiDepartment of Applied Physics, Hong Kong Polytechnic University, Hong Kong SAR, China.
Sheung Mei NgDepartment of Applied Physics, Hong Kong Polytechnic University, Hong Kong SAR, China.
Chee Leung MakDepartment of Applied Physics, Hong Kong Polytechnic University, Hong Kong SAR, China.
Yong Jie HuangDepartment of Physics and Institute of Advanced Materials, Hong Kong Baptist University, Hong Kong SAR, China.ORCID http://orcid.org/0000-0001-6692-9283
Yang WangState Key Laboratory of Flexible Electronics (LoFE), Institute of Advanced Materials (IAM), School of Chemistry and Life Sciences, Nanjing University of Posts and Telecommunications, Nanjing, China.
Zhan-Bo JiaState Key Laboratory of Flexible Electronics (LoFE), Institute of Advanced Materials (IAM), School of Chemistry and Life Sciences, Nanjing University of Posts and Telecommunications, Nanjing, China.
Xiang-Chun LiState Key Laboratory of Flexible Electronics (LoFE), Institute of Advanced Materials (IAM), School of Chemistry and Life Sciences, Nanjing University of Posts and Telecommunications, Nanjing, China.
Luying YiDepartment of Chemistry, National University of Singapore, Singapore, Singapore.
Ifor D W SamuelOrganic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, UK.ORCID http://orcid.org/0000-0001-7821-7208
Kok Wai CheahDepartment of Physics and Institute of Advanced Materials, Hong Kong Baptist University, Hong Kong SAR, China. kwcheah@associate.hkbu.edu.hk.ORCID http://orcid.org/0000-0002-5226-2040
Xiaogang LiuDepartment of Chemistry, National University of Singapore, Singapore, Singapore. chmlx@nus.edu.sg.ORCID http://orcid.org/0000-0003-2517-5790
Wei HuangState Key Laboratory of Flexible Electronics (LoFE), Institute of Advanced Materials (IAM), School of Chemistry and Life Sciences, Nanjing University of Posts and Telecommunications, Nanjing, China. vc@nwpu.edu.cn.ORCID http://orcid.org/0000-0001-7004-6408
Wen-Yong LaiState Key Laboratory of Flexible Electronics (LoFE), Institute of Advanced Materials (IAM), School of Chemistry and Life Sciences, Nanjing University of Posts and Telecommunications, Nanjing, China. iamwylai@njupt.edu.cn.ORCID http://orcid.org/0000-0003-2381-1570

Funding

National Natural Science Foundation of China (National Science Foundation of China) 21835003, 91833304, 21422402, 21674050
6 · The paper itself

Abstract

Organic semiconductors exhibit unique semiconducting behaviour due to π-electron delocalization along their molecular chains, making them attractive for various optoelectronic applications. However, their low optical damage thresholds have limited their use in nonlinear optics, particularly in stimulated Raman scattering. Here we demonstrate a general method to significantly amplify molecular vibrations in organic semiconductors by utilizing spectrally tailored gain from stimulated emission, bypassing the necessity for traditional optical cavities. This method achieves Raman thresholds as low as ~10-50 μJ cm

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.