ArticleMicromachines2025
Gallium Nitride High Electron Mobility Transistor Device with Integrated On-Chip Array Junction Temperature Monitoring Unit.
Article in Micromachines, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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6 authors.
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Abstract
Herein, we present a novel method for junction temperature monitoring of GaN HEMT devices to achieve real-time temperature perception at different locations on the device surface. Through sputtering patterned Ti/Pt thermistor strips on the surface of a GaN HEMT device to construct an on-chip array junction temperature monitoring unit, the thermal distribution of the device during operation is fully reflected. The developed temperature monitoring unit exhibited a desirable temperature coefficient of resistance of 0.183%/°C in the range of 25 °C to 205 °C. Comparison with the thermal imager shows that the integrated temperature monitoring unit can accurately reflect the real-time temperature with a monitoring accuracy of more than 95%, which helps to improve the long-term reliability of GaN power devices under actual application conditions of high frequency and high power density.
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