Evidence map›Paper›PMID 40141880›Full record

ArticleMicromachines2025

Zero-Power, High-Frequency Floating Memristor Emulator Circuit and Its Applications.

Imen Barraj, Amel Neifar, Hassen Mestiri, Mohamed Masmoudi

Abstract read
In one paragraph

Article in Micromachines, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.

0numbers the graph read from it
0cells of the map it votes in
3citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

3 citing papers in PubMed.

  1. Article
  2. Article
  3. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

4 authors.

Imen BarrajDepartment of Computer Engineering, College of Computer Engineering and Sciences, Prince Sattam Bin Abdulaziz University, Al-Kharj 11942, Saudi Arabia.
Amel NeifarSystems Integration & Emerging Energies (SI2E), Electrical Engineering Department, National Engineering School of Sfax, University of Sfax, Sfax 3038, Tunisia.
Hassen MestiriDepartment of Computer Engineering, College of Computer Engineering and Sciences, Prince Sattam Bin Abdulaziz University, Al-Kharj 11942, Saudi Arabia.ORCID 0000-0001-7226-3975
Mohamed MasmoudiSystems Integration & Emerging Energies (SI2E), Electrical Engineering Department, National Engineering School of Sfax, University of Sfax, Sfax 3038, Tunisia.

Funding

Prince Sattam bin Abdulaziz University PSAU/2024/01/31593
6 · The paper itself

Abstract

This paper presents a novel passive floating memristor emulator that operates without an external DC bias, leveraging the DTMOS technique. The design comprises only four MOSFETs and eliminates the need for external capacitors. The emulator achieves a high operating frequency of around 250 MHz and consumes zero static power. A comprehensive analysis and simulation, conducted using 180 nm CMOS technology, validates the circuit's performance. The versatility and effectiveness of the proposed emulator are demonstrated through its application in various circuits, including logic gates, a ring oscillator, and analog filters, highlighting its potential for diverse low-power, high-frequency applications. The proposed emulator provides a compact, efficient, and integrable solution for nanoelectronic circuit designs.

Indexed as

floatinghigh frequencymemristor emulatorMOSFETpinched hysteresis loop

Identifiers

PMID40141880
PMCPMC11944268

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.