ArticleMaterials (Basel, Switzerland)2025
Enhanced Long-Term In-Sensing Memory in ZnO Nanoparticle-Based Optoelectronic Synaptic Devices Through Thermal Treatment.
Article in Materials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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Who cites it
4 citing papers in PubMed.
- Green Nanoarchitectonics of Adaptive Electronic Nanomaterials for Biocompatible Biointerfaces and Improved Human Health.Nanotechnology, science and applications · 2026Review
- Substrate Orientation-Dependent Synaptic Plasticity and Visual Memory in Sol-Gel-Derived ZnO Optoelectronic Devices.Materials (Basel, Switzerland) · 2025Article
- Gate-Controlled Three-Terminal ZnO Nanoparticle Optoelectronic Synaptic Devices for In-Sensor Neuromorphic Memory Applications.Nanomaterials (Basel, Switzerland) · 2025Article
- Synaptic Plasticity and Memory Retention in ZnO-CNT Nanocomposite Optoelectronic Synaptic Devices.Materials (Basel, Switzerland) · 2025Article
Corrections and comments
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Authors and funding
3 authors.
Funding
Abstract
Two-terminal optoelectronic synaptic devices based on ZnO nanoparticles (NPs) were fabricated to investigate the effects of thermal annealing control (200 °C-500 °C) in nitrogen and oxygen atmospheres on surface morphology, optical response, and synaptic functionality. Atomic force microscopy (AFM) analysis revealed improved grain growth and reduced surface roughness. At the same time, UV-visible spectroscopy and photoluminescence confirmed a blue shift in the absorption edge and enhanced near-band-edge emission, particularly in nitrogen-annealed devices due to increased oxygen vacancies. X-ray photoelectron spectroscopy (XPS) analysis of the O 1s spectra confirmed that oxygen vacancies were more pronounced in nitrogen-annealed devices than in oxygen-annealed ones at 500 °C. Optical resistive switching was observed, where 365 nm ultraviolet (UV) irradiation induced a transition from a high-resistance state (HRS) to a low-resistance state (LRS), attributed to electron-hole pair generation and oxygen desorption. The electrical reset process, achieved by applying -1.0 V to -5.0 V, restored the initial HRS, demonstrating stable switching behavior. Nitrogen-annealed devices with higher oxygen vacancies exhibited superior synaptic performance, including higher excitatory postsynaptic currents, stronger paired-pulse facilitation, and extended persistent photoconductivity (PPC) duration, enabling long-term memory retention. By systematically varying UV exposure time, intensity, pulse number, and frequency, ZnO NPs-based devices demonstrated the transition from short-term to long-term memory, mimicking biological synaptic behavior. Learning and forgetting simulations showed faster learning and slower decay in nitrogen-annealed devices, emphasizing their potential for next-generation neuromorphic computing and energy-efficient artificial synapses.
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Registered trials
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