ArticleNanomaterials (Basel, Switzerland)2025
High-Mobility Tellurium Thin-Film Transistor: Oxygen Scavenger Effect Induced by a Metal-Capping Layer.
Article in Nanomaterials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
3 citing papers in PubMed.
- Revealing and engineering contact-origin noise in ultrathin tellurium transistors.Nanoscale advances · 2026Article
- In Situ Optical Monitoring and Morphological Evolution of Si Nanowires Grown on Faceted AlNanomaterials (Basel, Switzerland) · 2025Article
- Nanostructured Bubble Thin Films-From Simple Fabrication to Scalable Applications: A Review.Nanomaterials (Basel, Switzerland) · 2025Review
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
8 authors.
Funding
Abstract
With the ongoing development of electronic devices, there is an increasing demand for new semiconductors beyond traditional silicon. A key element in electronic circuits, complementary metal-oxide semiconductor (CMOS), utilizes both n-type and p-type semiconductors. While the advancements in n-type semiconductors have been substantial, the development of high-mobility p-type semiconductors has lagged behind. Recently, tellurium (Te) has been recognized as a promising candidate due to its superior electrical properties and the capability for large-area deposition via vacuum processes. In this work, an innovative approach involving the addition of a metal-capping layer onto Te thin-film transistors (TFTs) is proposed, which significantly enhances their electrical characteristics. In particular, the application of an indium (In) metal-capping layer has led to a dramatic increase in the field-effect mobility of Te TFTs from 2.68 to 33.54 cm
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.