ArticleAdvanced materials (Deerfield Beach, Fla.)2025
Improved Facet and Edge Passivation in Near-Infrared III-V Colloidal Quantum Dot Photodetectors.
Article in Advanced materials (Deerfield Beach, Fla.), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 9 papers.
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Who cites it
9 citing papers in PubMed.
- Colloidal InSb Quantum Dots for eSWIR Photodetection via Decoupling Nucleation and Growth.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- Beyond Wisdom in III-V Optoelectronics: Physics-Enhanced Neural Networks Unveil the Role of Cubic Boron Arsenide.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- Ligand-Mediated Shape Engineering of SWIR InAs Colloidal Quantum Dots for Photodetector Applications.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- A Bifunctional Colloidal Quantum Dot Diode for Nanosecond Short-Wave Infrared Detection and Emission.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- Large Colloidal InAs Nanocrystals Synthesized with a Grignard Reagent.Chemistry of materials : a publication of the American Chemical Society · 2026Article
- Current Progress of Excellent Photodetectors Based on Novel Semiconductor Nanomaterials.Nanomaterials (Basel, Switzerland) · 2026Review
- Internal field tailoring enables low noise high speed colloidal quantum dot photodetectors beyond 1500 nm.Nature communications · 2026Article
- Solid-liquid interface synthesis of selective (111)-oriented CsNature communications · 2026Article
- Improved Facet and Edge Passivation in Near-Infrared III-V Colloidal Quantum Dot Photodetectors.Advanced materials (Deerfield Beach, Fla.) · 2025Article
Corrections and comments
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Authors and funding
13 authors.
Funding
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Abstract
Lead-free III-V colloidal quantum dots (CQDs) are of significant interest for their potential in near-infrared (NIR) to short-wave infrared (SWIR) photodetection. However, achieving effective surface passivation remains challenging, especially as larger CQD sizes introduce more complex surface facets and compositions while shifting the absorption peak from the NIR to the SWIR range. In this study, a mixed-halide passivation strategy is developed for large InAs CQDs, an approach that led to a doubling in anti-oxidation ability and achieves a hole mobility of 0.03 cm
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