ArticleNature materials2025
Wafer-scale AA-stacked hexagonal boron nitride grown on a GaN substrate.
Article in Nature materials, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 7 papers.
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Who cites it
7 citing papers in PubMed.
- Stacking-induced direct band gap in CVD-grown 1H MoSNature · 2026Article
- Atomistic Kinetics of Dislocation-Mediated Grain Growth in Monolayer MoSAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Van der Waals template-encoded soft epitaxy of tellurium enabled by atomic layer deposition.Science advances · 2026Article
- Twist-controlled modulation of quantum emitters in hexagonal boron nitride.Science advances · 2026Article
- Analog Switching in Hexagonal Boron Nitride Memristors via Multiple Nano-Filaments Confinement.Small (Weinheim an der Bergstrasse, Germany) · 2025Article
- Recent Advances in Chemical Vapor Deposition of Hexagonal Boron Nitride on Insulating Substrates.Nanomaterials (Basel, Switzerland) · 2025Review
- Homoepitaxial growth of isotopically enriched hNPJ 2D materials and applications · 2025Article
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Authors and funding
22 authors.
Funding
Abstract
The stacking sequence of two-dimensional hexagonal boron nitride (hBN) is a critical factor that determines its polytypes and its distinct physical properties. Although most hBN layers adopt the thermodynamically stable AA' stacking sequence, achieving alternative stacking configurations has remained a long-standing challenge. Here we demonstrate the scalable synthesis of hBN featuring unprecedented AA stacking, where atomic monolayers align along the c axis without any translation or rotation. This previously considered thermodynamically unfavourable hBN polytype is achieved through epitaxial growth on a two-inch single-crystalline gallium nitride wafer, using a metal-organic chemical vapour deposition technique. Comprehensive structural and optical characterizations, complemented by theoretical modelling, evidence the formation of AA-stacked multilayer hBN and reveal that hBN nucleation on the vicinal gallium nitride surface drives the unidirectional alignment of layers. Here electron doping plays a central role in stabilizing the AA stacking configuration. Our findings provide further insights into the scalable synthesis of engineered hBN polytypes, characterized by unique properties such as large optical nonlinearity.
Identifiers
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Registered trials
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