Evidence map›Paper›PMID 40108200›Full record

ArticleNature communications2025

Unveiling ECRAM switching mechanisms using variable temperature Hall measurements for accelerated AI computation.

Hyunjeong Kwak, Junyoung Choi, Seungmin Han, Eun Ho Kim, Chaeyoun Kim, Paul Solomon, Junyong Lee, Doyoon Kim, Byungha Shin, Donghwa Lee and 2 more

Abstract read
In one paragraph

Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Review
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

12 authors.

Hyunjeong KwakDepartment of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea.ORCID http://orcid.org/0009-0008-8814-1823
Junyoung ChoiDepartment of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea.
Seungmin HanDepartment of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea.
Eun Ho KimDepartment of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea.ORCID http://orcid.org/0000-0001-9109-8522
Chaeyoun KimDepartment of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea.ORCID http://orcid.org/0009-0005-5378-9900
Paul SolomonIBM T. J. Watson Research Center, Yorktown Heights, NY, USA.
Junyong LeeDepartment of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea.ORCID http://orcid.org/0009-0007-7654-0643
Doyoon KimDepartment of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea.
Byungha ShinDepartment of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea.ORCID http://orcid.org/0000-0001-6845-0305
Donghwa LeeDepartment of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea.ORCID http://orcid.org/0000-0002-8956-3648
Oki GunawanIBM T. J. Watson Research Center, Yorktown Heights, NY, USA. ogunawa@us.ibm.com.ORCID http://orcid.org/0000-0002-7608-9262
Seyoung KimDepartment of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea. kimseyoung@postech.ac.kr.ORCID http://orcid.org/0000-0002-0408-1165

Funding

Ministry of Trade, Industry and Energy (Ministry of Trade, Industry and Energy, Korea) 2410000283, 20024760, 23008-45FCSamsung IO220824-02186-01
6 · The paper itself

Abstract

Electrochemical random-access memory devices are promising for analog cross-point array-based artificial intelligence accelerators due to their high stability and programmability. However, understanding their switching mechanism is challenging due to complex multilayer structures and the high resistivity of oxide materials. Here, we fabricate multi-terminal Hall-bar devices and conduct alternating current magnetic parallel dipole line Hall measurements to extract transport parameters. Through variable-temperature Hall measurements, we determine the oxygen donor level at approximately 0.1 eV in tungsten oxide and reveal that conductance potentiation even at low temperatures results from increased mobility and carrier density. This behavior is linked to reversible electronic and atomic structure changes, supported by density functional theory calculations. Our findings enhance the understanding of electrochemical random-access memory switching mechanisms and provide insights for improving high-performance, energy-efficient artificial intelligence computation in analog hardware.

Identifiers

PMID40108200
PMCPMC11923131

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.