Evidence map›Paper›PMID 40105751›Full record

ArticleACS nano2025

Stability and Reliability of van der Waals High-κ SrTiO

Seyed Mehdi Sattari-Esfahlan, Allen Jian Yang, Rittik Ghosh, Wenwen Zheng, Gerhard Rzepa, Theresia Knobloch, Mario Lanza, Xiao Renshaw Wang, Tibor Grasser

Abstract read
In one paragraph

Article in ACS nano, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.

0numbers the graph read from it
0cells of the map it votes in
6citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

6 citing papers in PubMed.

  1. Mobile charges in MoSCommunications engineering · 2026
    Article
  2. Review
  3. Review
  4. Near-zero hysteresis van der Waals MnAlCommunications materials · 2026
    Article
  5. Article
  6. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors.

Seyed Mehdi Sattari-EsfahlanInstitute for Microelectronics (TU Wien), Gusshausstrasse 27-29, 1040 Vienna, Austria.ORCID 0000-0002-4596-6015
Allen Jian YangDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore.
Rittik GhoshInstitute for Microelectronics (TU Wien), Gusshausstrasse 27-29, 1040 Vienna, Austria.ORCID 0000-0003-3656-9533
Wenwen ZhengMaterials Science and Engineering Program, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia.
Gerhard RzepaGlobal TCAD Solutions, 1010 Vienna, Austria.
Theresia KnoblochInstitute for Microelectronics (TU Wien), Gusshausstrasse 27-29, 1040 Vienna, Austria.ORCID 0000-0001-5156-9510
Mario LanzaDepartment of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore.
Xiao Renshaw WangDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore.ORCID 0000-0002-5503-9899
Tibor GrasserInstitute for Microelectronics (TU Wien), Gusshausstrasse 27-29, 1040 Vienna, Austria.ORCID 0000-0001-6536-2238

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Single-crystal SrTiO

Indexed as

bias temperature instabilitycounterclockwise hysteresisfield-effect transistorshigh-k insulatorshysteresis widthsingle-crystal SrTiO3

Identifiers

PMID40105751
PMCPMC11966746

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.