ArticleLight, science & applications2025
Room-temperature waveguide-integrated photodetector using bolometric effect for mid-infrared spectroscopy applications.
Article in Light, science & applications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
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Who cites it
5 citing papers in PubMed.
- Mid-Infrared Sensing and Ultrafast Photoresponse in Silicon-Based Plasmonic Detectors.ACS photonics · 2026Article
- Neuromorphic Near-Sensor and In-Sensor Computing Enabled by Next-Generation Material-Based Sensors.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Review
- Multifunctional lithium niobate platform for photodetection and photoacoustic and thermoelastic gas sensing.Nature communications · 2026Article
- A Photovoltaic-Integrated Broadband Photodetector Based on Vertically-Stacked Lateral-Aligned Nanowire Arrays.Sensors (Basel, Switzerland) · 2025Article
- A dual-mode transparent device for 360° quasi-omnidirectional self-driven photodetection and efficient ultralow-power neuromorphic computing.Light, science & applications · 2025Article
Corrections and comments
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Authors and funding
8 authors.
Funding
Abstract
Waveguide-integrated mid-infrared (MIR) photodetectors are pivotal components for the development of molecular spectroscopy applications, leveraging mature photonic integrated circuit (PIC) technologies. Despite various strategies, critical challenges still remain in achieving broadband photoresponse, cooling-free operation, and large-scale complementary-metal-oxide-semiconductor (CMOS)-compatible manufacturability. To leap beyond these limitations, the bolometric effect - a thermal detection mechanism - is introduced into the waveguide platform. More importantly, we pursue a free-carrier absorption (FCA) process in germanium (Ge) to create an efficient light-absorbing medium, providing a pragmatic solution for full coverage of the MIR spectrum without incorporating exotic materials into CMOS. Here, we present an uncooled waveguide-integrated photodetector based on a Ge-on-insulator (Ge-OI) PIC architecture, which exploits the bolometric effect combined with FCA. Notably, our device exhibits a broadband responsivity of 28.35%/mW across 4030-4360 nm (and potentially beyond), challenging the state of the art, while achieving a noise-equivalent power of 4.03 × 10
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.