ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2025
Deep-UV Light-Emitting Based on the hBN:S/hBN: Mg Homojunction.
Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
2 citing papers in PubMed.
- Recent Advances in Chemical Vapor Deposition of Hexagonal Boron Nitride on Insulating Substrates.Nanomaterials (Basel, Switzerland) · 2025Review
- Deep-UV Light-Emitting Based on the hBN:S/hBN: Mg Homojunction.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
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Authors and funding
11 authors.
Funding
Abstract
A hexagonal boron nitride (hBN) based p-n homo-junction is expected to demonstrate a great potential for being fabricated into an emitter (either light-emitting diode or laser diode) in the deep-UV spectral region. However, it remains a great challenge to achieve n-type conductive hBN. Herein, n-type hBN is obtained by means of doping sulfur into hBN. The structure and the electric properties of S-doped hBN is studied via density functional theory, indicating that the orbital coupling between S 3p and B 2p orbital introduces shallow donor energy levels. The S atoms in the multilayer structure demonstrate enhanced electron delocalization compared with its mono-layer counterpart, suggesting that multilayer hBN:S is more inclined to be n-type conductive than its mono-layer counterpart. Experimentally, a multilayer hBN:S sample is successfully grown on sapphire substrates, where the S content, up to 1.21%, is obtained. The hBN:S film shows an in-plane current of 1.6 nA using Ti as ohmic contact and 8.4 nA using Ni as Schottky contact, respectively. The donor level induced by the S atoms is located at 0.349 eV below the CBM. Finally, a vertically-stacked n-hBN/p-hBN (hBN:S/hBN: Mg) structured junction is grown, and demonstrating a promise for being fabricated into a deep-UV emitter.
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Registered trials
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