Characteristics of 3D-Integrated GaN Power Module Under Multi Heat Source Coupling.

Yijun Shi, Mingen Lv, Guoguang Lu, Caixing Hui, Liang He, Xinghuan Chen, Yuan Chen, Xiangjun Lu

Abstract read

In one paragraph

Article in Materials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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0cells of the map it votes in

0citing papers in PubMed

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1 · What the graph read from it

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Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

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0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

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5 · Who and what money

Authors and funding

8 authors.

Yijun ShiChina Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China.ORCID 0000-0001-8485-1109

Mingen LvChina Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China.

Guoguang LuChina Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China.

Caixing HuiSchool of Material Science and Engineering, Xiamen University of Technology, Xiamen 361024, China.

Liang HeChina Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China.

Xinghuan ChenChina Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China.ORCID 0000-0002-8294-1730

Yuan ChenChina Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China.ORCID 0000-0002-9357-2344

Xiangjun LuSchool of Material Science and Engineering, Xiamen University of Technology, Xiamen 361024, China.

Funding

the Guangzhou Basic and Applied Basic Research Project SL2024A04J00119the Key-Area Research and Development Program of Guangdong Province 2024B0101060002the National Natural Science Foundation of China 62374045the Natural Science Foundation of Guangdong Province 2024A1515010852the State Key Laboratory Special Fund of China Electronic Product Reliability and Environmental Testing Research Institute 24D04

6 · The paper itself

Abstract

3D-integrated GaN power modules can effectively reduce parasitic parameters and enhance the power system's performance. However, the heat from each power chip during operation can lead to a mutual thermal coupling effect, potentially causing performance drift of the GaN power chips. This work investigates the impact of the thermal coupling effect in a 3D-integrated GaN power module on the characteristics of its GaN power chips. The GaN power chips' characteristics are measured before and after the other power chips in the 3D-integrated GaN power module and after applying

Indexed as

3D integrationGaN power modulemulti-heat source couplingthreshold voltage

Identifiers

PMID40077308

DOI10.3390/ma18051082

PMCPMC11901255

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.