High-Mobility, High-Photostability Tetravalent-Terbium-Doped Indium-Tin-Zinc-Oxide Thin-Film Transistors with a Stacked-Channel Structure.

Huimin Su, Linfeng Lan, Jintao Xu, Qi Zhou, Yaping Li, Dechun Zeng, Shuai Yang, Baozhong Chen, Junbiao Peng

Abstract read

In one paragraph

Article in ACS omega, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it

0cells of the map it votes in

0citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors.

Huimin SuState Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Wushan Road 381, Guangzhou 510640, China.

Linfeng LanState Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Wushan Road 381, Guangzhou 510640, China.ORCID https://orcid.org/0000-0002-6477-2830

Jintao XuState Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Wushan Road 381, Guangzhou 510640, China.

Qi ZhouState Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Wushan Road 381, Guangzhou 510640, China.

Yaping LiState Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Wushan Road 381, Guangzhou 510640, China.

Dechun ZengState Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Wushan Road 381, Guangzhou 510640, China.

Shuai YangState Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Wushan Road 381, Guangzhou 510640, China.

Baozhong ChenState Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Wushan Road 381, Guangzhou 510640, China.

Junbiao PengState Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Wushan Road 381, Guangzhou 510640, China.ORCID https://orcid.org/0000-0003-1671-2750

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The trade-off between mobility and stability is the main problem for amorphous oxide semiconductor (AOS) thin-film transistors (TFTs). In this work, a high-mobility and good-photostability Tb-doped indium-tin-zinc oxide (Tb:ITZO) AOS is studied. The ITZO TFT without Tb doping had a mobility of as high as 49.4 cm

Identifiers

PMID40060781

DOI10.1021/acsomega.4c09994

PMCPMC11886735

What OpenQuestion holds

Textmetadata

LicenceCC BY-NC-ND

Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.