ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2025
Flexible Organic Field-Effect Transistor (OFET) Based 2T0C DRAM Cells with 2-Bit Operation and Extended Retention.
Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
3 citing papers in PubMed.
- Unlocking the performance limits of 2T0C DRAM with Ω-shaped-gated single-crystal InScience advances · 2026Article
- Reconfigurable skin electronics enabled by intrinsically stretchable photoelectric memory transistors.Nature communications · 2026Article
- Flexible Organic Field-Effect Transistor (OFET) Based 2T0C DRAM Cells with 2-Bit Operation and Extended Retention.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
9 authors.
Funding
Abstract
The emerging demand of data storage in wearable devices, flexible circuits based on organic semiconductor materials are encouraged, while organic field effect transistors face the challenges of low operating voltage and high on/off ratio. In this work, a high-performance flexible organic field effect transistor (OFET) is built with a threshold voltage range of -0.45 to -0.86 V and an on/off ratio between 10
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.