Evidence map›Paper›PMID 40044650›Full record

ArticleNature communications2025

Tunneling-barrier-controlled sensitive deep ultraviolet photodetectors based on van der Waals heterostructures.

Xiang Li, Ziqing Li, Jinhan Hu, Bangchi Huang, Jianlin Shi, Zhipeng Zhong, YeZhao Zhuang, Yan Chen, Jingli Wang, Jianfeng Li and 8 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 11 papers.

0numbers the graph read from it
0cells of the map it votes in
11citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

11 citing papers in PubMed.

  1. Article
  2. Article
  3. Defect-Polarization Coupling in 3D-Graphene/β-GaSmall (Weinheim an der Bergstrasse, Germany) · 2026
    Article
  4. Electrically Tunable Tunneling and Spectral Response in WSeSmall (Weinheim an der Bergstrasse, Germany) · 2026
    Article
  5. Synergistic Pyro-Phototronics and Structural Anisotropy in CsAgAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
  6. Ultraviolet Photodetectors Based on 4H-SiC With Honeycomb-Like Light-Trapping Structures.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
  7. A Broad-Band Self-Powered Photodetector Based on a MoTeMaterials (Basel, Switzerland) · 2026
    Article
  8. Article
  9. Article
  10. Article
  11. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

18 authors.

Xiang Li *State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Materials Science, Fudan University, Shanghai, China.
Ziqing Li *State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Materials Science, Fudan University, Shanghai, China.ORCID http://orcid.org/0000-0002-8126-2728
Jinhan HuState Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Materials Science, Fudan University, Shanghai, China.
Bangchi HuangState Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Materials Science, Fudan University, Shanghai, China.
Jianlin ShiState Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Materials Science, Fudan University, Shanghai, China.
Zhipeng ZhongState Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Materials Science, Fudan University, Shanghai, China.
YeZhao ZhuangState Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Materials Science, Fudan University, Shanghai, China.
Yan ChenState Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Materials Science, Fudan University, Shanghai, China.
Jingli WangState Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China.ORCID http://orcid.org/0000-0002-6133-1212
Jianfeng LiSchool of Materials Science and Engineering, Lanzhou Jiaotong University, Lanzhou, China.
Lei ZhangSchool of Mathematics and Physics, Lanzhou Jiaotong University, Lanzhou, China.ORCID http://orcid.org/0000-0002-5711-1399
Xiangjian MengState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China.ORCID http://orcid.org/0000-0003-4178-9362
Wu ShiZhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China.ORCID http://orcid.org/0000-0002-6458-4776
Shiyou ChenKey Laboratory of Computational Physical Sciences (MOE), and State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China.ORCID http://orcid.org/0000-0002-4039-8549
Xiaosheng FangState Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Materials Science, Fudan University, Shanghai, China. xshfang@fudan.edu.cn.ORCID http://orcid.org/0000-0003-3387-4532
Hai HuangState Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Materials Science, Fudan University, Shanghai, China. huangh@fudan.edu.cn.ORCID http://orcid.org/0000-0002-6037-4544
Jianlu WangState Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Materials Science, Fudan University, Shanghai, China. jianluwang@fudan.edu.cn.ORCID http://orcid.org/0009-0008-3976-483X
Junhao ChuState Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Materials Science, Fudan University, Shanghai, China.

Funding

National Natural Science Foundation of China (National Science Foundation of China) 12204109
6 · The paper itself

Abstract

Deep ultraviolet (DUV) photodetection usually relies on wide-bandgap semiconductors, which however face challenges in material growth and doping processes. In this work, we proposed and validated a photodetection scheme based on tunneling barrier modulation, achieving highly sensitive DUV photodetection. Using a two-dimensional van der Waals heterostructure, the device integrates MoS

Identifiers

PMID40044650
PMCPMC11882958

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.