ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2025
Nanoscale Resist-Free Patterning of Halogenated Zeolitic Imidazolate Frameworks by Extreme UV Lithography.
Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
5 citing papers in PubMed.
- Recent efforts of vapour-phase strategies for EUV resist toward high- and hyper-NA extreme ultraviolet lithography.Chemical science · 2026Review
- Article
- ZIF-71-Coated CuO:Al with Enhanced Gas-Sensing Performance forACS applied electronic materials · 2025Article
- VIS-XUV Optical Constants and Electronic Band Parameters of a Tin-Oxo Cage Photoresist (SnThe journal of physical chemistry. C, Nanomaterials and interfaces · 2025Article
- Nanoscale Resist-Free Patterning of Halogenated Zeolitic Imidazolate Frameworks by Extreme UV Lithography.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
Corrections and comments
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Authors and funding
8 authors.
Funding
Abstract
Advancements in patterning techniques for metal-organic frameworks (MOFs) are crucial for their integration into microelectronics. However, achieving precise nanoscale control of MOF structures remains challenging. In this work, a resist-free method for patterning MOFs is demonstrated using extreme ultraviolet (EUV) lithography with a resolution of 40 nm. The role of halogen atoms in the linker and the effect of humidity are analyzed through in situ and near-ambient pressure synchrotron X-ray photoelectron spectroscopy. In addition to facilitating the integration of MOFs, the results offer valuable insights for developing the highly sought-after positive-tone EUV photoresists.
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Registered trials
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