Evidence map›Paper›PMID 40033932›Full record

ArticleACS applied materials & interfaces2025

Memorization of Strain-Induced Moiré Patterns in Vertical van der Waals Materials.

Aditya Dey, Nazmul Hasan, Stephen M Wu, Hesam Askari

Abstract read
In one paragraph

Article in ACS applied materials & interfaces, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
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1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

4 authors.

Aditya DeyDepartment of Mechanical Engineering, University of Rochester, Rochester, New York 14611, United States.ORCID 0000-0002-5041-8662
Nazmul HasanDepartment of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14620, United States.
Stephen M WuDepartment of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14620, United States.ORCID 0000-0001-6079-3354
Hesam AskariDepartment of Mechanical Engineering, University of Rochester, Rochester, New York 14611, United States.ORCID 0000-0001-5562-1363

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Twisting layers in van der Waals (vdW) materials have traditionally produced moiré patterns but often suffer from alignment issues and nonuniformity due to the sensitivity of twist angles. Applying strain alone can also generate these patterns, eliminating the need for interlayer rotation and enabling controlled, reproducible moiré formation. We present the mechanistic principles governing the evolution of strain-induced moiré patterns in vertically stacked graphene through atomistic simulations. By analyzing local strain distribution, we identify a three-stage interlayer slippage process responsible for pattern formation. Our analyses reveal that these triangular moiré domains are stable and retained upon unloading, ensuring consistent and reproducible pattern formation even after strain removal. Additionally, we demonstrate that this strain history can be utilized to reapply load in a step-by-step process to achieve uniform moiré domains without requiring higher strain magnitudes. This approach provides a robust mechanism for designing wafer-scale quantum materials with uniform and reproducible moiré superlattices.

Indexed as

atomistic simulationsinterface mechanicsmachine-learned interatomic potentialstrain-induced moiré patternsstrain memorization

Identifiers

PMID40033932
PMCPMC11912196

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.