Evidence map›Paper›PMID 40006395›Full record

ArticleSensors (Basel, Switzerland)2025

Research on High-Responsivity Si/Ge-APD in Visible-Near-Infrared Wide Spectrum with Light-Absorption-Enhanced Nanostructure.

Guangtong Guo, Weishuai Chen, Kaifeng Zheng, Jinguang Lv, Yupeng Chen, Baixuan Zhao, Yingze Zhao, Yuxin Qin, Xuefei Wang, Dan Gao and 2 more

Abstract read
In one paragraph

Article in Sensors (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

12 authors.

Guangtong GuoChangchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.
Weishuai ChenChangchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.
Kaifeng ZhengChangchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.
Jinguang LvChangchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.ORCID 0009-0007-2474-2235
Yupeng ChenChangchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.
Baixuan ZhaoChangchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.
Yingze ZhaoChangchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.
Yuxin QinChangchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.
Xuefei WangChangchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.
Dan GaoSchool of Physics, Tonghua Normal University, Tonghua 134000, China.ORCID 0000-0003-3813-4744
Jingqiu LiangChangchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.
Weibiao WangChangchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.

Funding

General project of natural science foundation of Jilin province 20240101297JCJilin Province Science and Technology Development Program Project 20190302062GXScience and technology research project of Education Department of Jilin Prov-ince JJKH20240646KJthe National Key Research and Development Program of China 2022YFB3604702, 2018YFB1801902Youth Project of National Natural Science Foundation of China 12004139
6 · The paper itself

Abstract

Photodetectors with broad spectral response and high responsivity demonstrate significant potential in optoelectronic applications. This study proposes a Si/Ge avalanche photodiode featuring nanostructures that enhance light absorption. By optimizing the device epitaxial structure and these nanostructures, a wide spectral responsivity from 0.4 to 1.6 μm is achieved. The results demonstrate that introducing surface photon-trapping nanoholes and SiO

Indexed as

high responsivityreflective gratingSi/Ge avalanche photodiodesurface photon-trapping nanoholesvisible–near infrared

Identifiers

PMID40006395
PMCPMC11858985

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.