ArticleNanomaterials (Basel, Switzerland)2025
Si-HgTe Quantum Dot Visible-Infrared Photodetector.
Article in Nanomaterials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
1 citing paper in PubMed.
- Surface Passivation of HgTe Nanocrystals Enabling EAdvanced materials (Deerfield Beach, Fla.) · 2026Article
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Authors and funding
9 authors.
Funding
Abstract
Silicon photodetectors are well developed, with the advantage of their low cost and easy fabrication. However, due to the semiconductor band gap limitation, their detection wavelength is limited in the visible and near-infrared ranges. To broaden the detection wavelength, we stacked a mercury telluride (HgTe) colloidal quantum dot (CQD) photodiode and a silicon PIN photodiode in series. This detector shows response spectra ranging from visible to short-wave infrared (430 nm to 2800 nm) at room temperature. At zero bias, the total photocurrents are 112.5 μA and 1.24 μA, with a tungsten lamp and a blackbody serving as light sources, respectively. The response speed can reach 1.65 μs, with the calculated detectivities of the visible wavelength D* = 1.01 × 10
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Registered trials
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