ArticleNanoscale advances2025
Improving the performance of floating gate phototransistor memory with perovskite nanocrystals embedded in fluorinated polyamic acids.
Article in Nanoscale advances, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
This study aims to develop a hybrid material using fluorine-containing polyamic acid (PAA) polymers and a perovskite (PVSK) for application in transistor-based photomemory devices to enhance both structural and electrical performance. Adding fluorides to the PAA material creates a structure with Lewis acid-base interactions, improving the interface between PVSK and PAA, reducing defect density in the floating gate dielectric layer, and passivating grain defects. Furthermore, the hydrophobic PAA structure provides an improved crystalline nucleation interface for the semiconductor pentacene, thereby significantly enhancing the hole mobility of the transistor. In electrical performance tests, devices utilizing ODA-6FDA (poly(4,4'-diaminodiphenyl ether-
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