ArticleNature communications2025
Low-temperature pressure-assisted liquid-metal printing for β-Ga
Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
5 citing papers in PubMed.
- Defect-Polarization Coupling in 3D-Graphene/β-GaSmall (Weinheim an der Bergstrasse, Germany) · 2026Article
- Flexible Electromagnetic Actuator with Liquid Metal Embedded in a Graphene Oxide/Thermoplastic Polyurethane Matrix.Micromachines · 2026Article
- Emerging Device Applications From Strong Light-Matter Interactions in 2D Materials.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Review
- Oxide Semiconductor Thin-Film Transistors for Low-Power Electronics.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Review
- Unraveling the Atomic Mechanism of the Crystalline Phase-Dependent Structural Features and Special Spectral Design of α-, β-, and Ɛ-Ga₂O₃.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
Corrections and comments
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Authors and funding
4 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Developing a low-temperature and cost-effective manufacturing process for energy-efficient and high-performance oxide-thin-film transistors (TFTs) is a crucial step toward advancing next-generation device applications such as wearable and flexible electronics. Among several methods, a liquid-metal printing technique is considered a promising, cost-effective oxide semiconductor process due to its inherent advantages, such as vacuum-free, low-thermal budget, high throughput, and scalability. In this study, we have developed a pressure-assisted liquid-metal printing technique enabling the low-temperature synthesis of polycrystalline wide bandgap n-channel oxide-TFTs. The n-channel oxide TFTs based on ~3 nm-thick β-Ga
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Registered trials
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