Evidence map›Paper›PMID 39979306›Full record

ArticleNature communications2025

Unconventional (anti)ferroelectricity in van der Waals group-IV monochalcogenides.

Fengrui Sui, Yilun Yu, Ju Chen, Ruijuan Qi, Rui Ge, Yufan Zheng, Beituo Liu, Rong Jin, Shijing Gong, Fangyu Yue and 1 more

Erratum issuedAbstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. An erratum has been issued. Cited by 4 papers.

0numbers the graph read from it
0cells of the map it votes in
4citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

4 citing papers in PubMed.

  1. Article
  2. Polarization-Enabled Piezoelectric Tellurium-Selenium (TeAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
  3. Emerging 2D Ferroelectric Semiconductors: From Fundamentals to Advanced Device Applications.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025
    Review
  4. Review
4 · The record

Corrections and comments

5 · Who and what money

Authors and funding

11 authors.

Fengrui Sui *Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China.ORCID http://orcid.org/0000-0003-3893-5517
Yilun Yu *Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China.ORCID http://orcid.org/0009-0000-6923-1075
Ju Chen *Engineering Research Center of Nanophotonics & Advanced Instrument (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China.
Ruijuan QiKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China. rjqi@ee.ecnu.edu.cn.ORCID http://orcid.org/0000-0003-2305-0505
Rui GeKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China.ORCID http://orcid.org/0009-0000-0625-2493
Yufan ZhengKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China.
Beituo LiuKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China.
Rong JinKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China.
Shijing GongEngineering Research Center of Nanophotonics & Advanced Instrument (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China. sjgong@ee.ecnu.edu.cn.ORCID http://orcid.org/0000-0002-9292-7609
Fangyu YueKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China. fyyue@ee.ecnu.edu.cn.ORCID http://orcid.org/0000-0002-3153-6022
Junhao ChuKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China.

Funding

East China Normal University (ECNU) Multifunctional Platform for Innovation (004)National Natural Science Foundation of China (National Science Foundation of China) 62274061National Natural Science Foundation of China (National Science Foundation of China) 62274066Natural Science Foundation of Chongqing (Natural Science Foundation of Chongqing Municipality) CCSTB2023NSCQ-MSX0975
6 · The paper itself

Abstract

Fundamentally, ferroelectrics must belong to a noncentrosymmetric space group, limiting the exploration of more new ferroelectric materials. We circumvent this limitation by triggering structure distortion and inducing ferroelectricity in centrosymmetric van der Waals group-IV monochalcogenide GeSe semiconductor that features unexpected intrinsic out-of-plane antiferroelectricity. Double-type and single-type hysteresis loops from electric measurements, bonding distortion observed in in-situ atomic imaging, and perpendicular polarization uncovered by first-principles calculations, confirm the intrinsic out-of-plane antiferroelectricity and the antiferroelectric-ferroelectric transition induced by the vertical external electric-field. The hidden out-of-plane antiferroelectricity and field induced ferroelectric polarization in spatial-inversion symmetric GeSe makes it a new member of van der Waals layered semiconductors with both in-plane and out-of-plane ferroelectricity, and possibly, can be extended to all group-IV monochalcogenides and other centrosymmetric van der Waals layered materials.

Identifiers

PMID39979306
PMCPMC11842844

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.