Evidence map›Paper›PMID 39976292›Full record

ArticleACS applied materials & interfaces2025

Nonvolatile and Volatile Memory Fusion of Antiferroelectric-like Hafnium-Zirconium Oxide for Multi-Bit Access and Endurance >10

Cheng-Hong Liu, Kuo-Yu Hsiang, Zhi-Xian Li, Fu-Sheng Chang, Zhao-Feng Lou, Jia-Yang Lee, Chee Wee Liu, Pin Su, Tuo-Hung Hou, Min-Hung Lee

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in ACS applied materials & interfaces, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Article
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors.

Cheng-Hong LiuProgram for Semiconductor Devices, Materials, and Hetero-integration, Graduate School of Advanced Technology, National Taiwan University, Taipei 106319, Taiwan.ORCID 0009-0004-9159-0938
Kuo-Yu HsiangProgram for Semiconductor Devices, Materials, and Hetero-integration, Graduate School of Advanced Technology, National Taiwan University, Taipei 106319, Taiwan.
Zhi-Xian LiInstitute of Electro-Optical Engineering, National Taiwan Normal University, Taipei 11677, Taiwan.
Fu-Sheng ChangProgram for Semiconductor Devices, Materials, and Hetero-integration, Graduate School of Advanced Technology, National Taiwan University, Taipei 106319, Taiwan.
Zhao-Feng LouProgram for Semiconductor Devices, Materials, and Hetero-integration, Graduate School of Advanced Technology, National Taiwan University, Taipei 106319, Taiwan.
Jia-Yang LeeProgram for Semiconductor Devices, Materials, and Hetero-integration, Graduate School of Advanced Technology, National Taiwan University, Taipei 106319, Taiwan.
Chee Wee LiuProgram for Semiconductor Devices, Materials, and Hetero-integration, Graduate School of Advanced Technology, National Taiwan University, Taipei 106319, Taiwan.
Pin SuInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan.
Tuo-Hung HouInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan.
Min-Hung LeeProgram for Semiconductor Devices, Materials, and Hetero-integration, Graduate School of Advanced Technology, National Taiwan University, Taipei 106319, Taiwan.ORCID 0000-0002-2007-2875

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The fusion of volatile and nonvolatile memory within a complementary-dynamic random-access memory (C-DRAM) in one cell is proposed with antiferroelectric-like hafnium-zirconium oxide with dual function characteristics of DRAM and storage class memory in the memory hierarchy. Atomic-resolution spherical aberration-corrected scanning transmission electron microscopy is employed to directly reveal the insights of phase evolution by utilizing diffractograms to determine lattice parameters. Storage-data-transfer-cycling-recovery with an alternating access scheme is introduced due to the characteristic of independent domains to exhibit multilevel states. Remanent polarization (

Indexed as

antiferroelectric (AFE)antiferroelectric-likeenduranceferroelectric (FE)nonvolatile memory (NVM)recoveryvolatile memory (VM)

Identifiers

PMID39976292
PMCPMC11891857

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.