Evidence map›Paper›PMID 39976225›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2025

Development of Self-Aligned Top-Gate Transistor Arrays on Wafer-Scale Two-Dimensional Semiconductor.

Yuxuan Zhu, Jinshu Zhang, Hui Xie, Yin Xia, Xiangqi Dong, Saifei Gou, Zhejia Zhang, Xinliu He, Haojie Chen, Mingrui Ao and 17 more

Abstract read
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Article
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

27 authors.

Yuxuan ZhuSchool of Microelectronics, Fudan University, Shanghai, 200433, P. R. China.
Jinshu ZhangSchool of Microelectronics, Fudan University, Shanghai, 200433, P. R. China.
Hui XieSchool of Information Science and Technology, Fudan University, Shanghai, 200433, P. R. China.
Yin XiaSchool of Microelectronics, Fudan University, Shanghai, 200433, P. R. China.
Xiangqi DongSchool of Microelectronics, Fudan University, Shanghai, 200433, P. R. China.
Saifei GouSchool of Microelectronics, Fudan University, Shanghai, 200433, P. R. China.
Zhejia ZhangSchool of Microelectronics, Fudan University, Shanghai, 200433, P. R. China.
Xinliu HeSchool of Microelectronics, Fudan University, Shanghai, 200433, P. R. China.
Haojie ChenSchool of Microelectronics, Fudan University, Shanghai, 200433, P. R. China.
Mingrui AoSchool of Microelectronics, Fudan University, Shanghai, 200433, P. R. China.
Qicheng SunSchool of Microelectronics, Fudan University, Shanghai, 200433, P. R. China.
Yan HuSchool of Microelectronics, Fudan University, Shanghai, 200433, P. R. China.
Yuchen TianSchool of Microelectronics, Fudan University, Shanghai, 200433, P. R. China.
Jieya ShangSchool of Microelectronics, Fudan University, Shanghai, 200433, P. R. China.
Yufei SongSchool of Microelectronics, Fudan University, Shanghai, 200433, P. R. China.
Jiahao WangSchool of Microelectronics, Fudan University, Shanghai, 200433, P. R. China.
Sen WangSchool of Microelectronics, Fudan University, Shanghai, 200433, P. R. China.
Xiaofei YueSchool of Information Science and Technology, Fudan University, Shanghai, 200433, P. R. China.
Chunxiao CongSchool of Information Science and Technology, Fudan University, Shanghai, 200433, P. R. China.
Lihui ZhouKey Laboratory for Advanced Materials and Feringa Nobel Prize Scientist Joint Research Center, Institute of Fine Chemicals, School of Chemistry & Molecular Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China.
Sheng DaiKey Laboratory for Advanced Materials and Feringa Nobel Prize Scientist Joint Research Center, Institute of Fine Chemicals, School of Chemistry & Molecular Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China.
Zihan XuShenzhen Six carbon Technology, Shenzhen, 518055, P. R. China.
Jing WanSchool of Information Science and Technology, Fudan University, Shanghai, 200433, P. R. China.
Haibing QiuSchool of Semiconductor and Physics, North University of China, Taiyuan, 030051, P. R. China.
Yin WangShaoxin Laboratory, Shaoxing, 312000, P. R. China.
Xiaojun TanShaoxin Laboratory, Shaoxing, 312000, P. R. China.
Wenzhong BaoSchool of Microelectronics, Fudan University, Shanghai, 200433, P. R. China.ORCID https://orcid.org/0000-0002-3871-467X

Funding

Innovation Program of Shanghai Municipal Education Commission 2021-01-07-00-07-E00077National Key Research and Development Program 2021YFA1200500National Natural Science Foundation of China 62334011Science and Technology Commission of Shanghai Municipality 23JC1401100Shanghai Pilot Program for Basic Research - Fudan University 21TQ1400100 (23TQ008)
6 · The paper itself

Abstract

Two-dimensional semiconductor materials (2DSM) effectively mitigate the short-channel effect due to their atomic thickness, offering significant advantages over traditional silicon-based materials, particularly in short channel length. In manufacturing 2DSM top-gate field-effect transistors (TG-FETs), simultaneous miniaturization of the gate and channel can only be achieved through a self-alignment process, enabling high-density integration of short-channel FETs. However, current self-aligned FETs based on 2DSM face challenges in attaining wafer-scale integration due to manufacturing process limitations. This work has successfully developed high-performance and wafer-scale TG-FET arrays using a self-aligned method that integrates the processes of dry etching, wet selective etching, and post-device optimization. The miniaturization is demonstrated by fabricating TG-FETs with a channel length of 200 nm, achieving an impressive on-state current density of 465.5 µA µm

Indexed as

2D semiconductorsoptimization processself‐alignedtop‐gatewafer‐scale

Identifiers

PMID39976225
PMCPMC12005750

What OpenQuestion holds

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Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.