Evidence map›Paper›PMID 39975628›Full record

ArticleNanophotonics (Berlin, Germany)2025

Artificial intelligence driven Mid-IR photoimaging device based on van der Waals heterojunctions of black phosphorus.

Ziqian Wang, Huide Wang, Chen Wang, Yushuo Bao, Weiying Zheng, Xiaoliang Weng, Yihan Zhu, Yi Liu, Yule Zhang, Xilin Tian and 16 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nanophotonics (Berlin, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Ultrahigh-Performance BiINanophotonics (Berlin, Germany) · 2026
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

26 authors.

Ziqian WangState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
Huide WangState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
Chen WangCollege of Chemistry and Chemical Engineering, Ocean University of China, Qingdao 266100, China.
Yushuo BaoInternational Collaborative Laboratory of 2D Materials for Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, Guangdong, China.
Weiying ZhengCollege of Electronic and Information Engineering, Shenzhen University, Shenzhen 518060, China.
Xiaoliang WengKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
Yihan ZhuState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
Yi LiuState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
Yule ZhangState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
Xilin TianState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
Shuo SunState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
Rui CaoState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
Zhe ShiSchool of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China.
Xing ChenSchool of Electronic Engineering, Chengdu Technological University, Chendu 611730, China.ORCID https://orcid.org/0000-0001-7746-846X
Meng QiuCollege of Chemistry and Chemical Engineering, Ocean University of China, Qingdao 266100, China.ORCID https://orcid.org/0000-0002-0178-3479
Hao WangState Key Laboratory of Radio Frequency Heterogeneous Integration, College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen 518060, P.R. China.
Jun LiuInternational Collaborative Laboratory of 2D Materials for Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, Guangdong, China.ORCID https://orcid.org/0000-0001-8336-4763
Shuqing ChenInternational Collaborative Laboratory of 2D Materials for Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, Guangdong, China.ORCID https://orcid.org/0000-0002-2321-4760
Yu-Jia ZengKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
Wugang LiaoCollege of Electronic and Information Engineering, Shenzhen University, Shenzhen 518060, China.
Zhangcheng HuangState Key Lab of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China.
Haiou LiGuangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China.
Lingfeng GaoCollege of Material Chemistry and Chemical Engineering, Key Laboratory of Organosilicon Chemistry and Material Technology, Ministry of Education, Key Laboratory of Organosilicon Material Technology, Hangzhou Normal University, Hangzhou 311121, Zhejiang, P.R. China.ORCID https://orcid.org/0000-0001-9685-2598
Jianqing LiSchool of Computer Science and Engineering, Macau University of Science and Technology, Cotai, Macau.
Dianyuan FanInternational Collaborative Laboratory of 2D Materials for Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, Guangdong, China.
Han ZhangState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.ORCID https://orcid.org/0000-0002-0166-1973

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Mid-infrared (Mid-IR) photodetection and imaging are pivotal across diverse applications, including remote sensing, communication, and spectral analysis. Among these, single-pixel imaging technology is distinguished by its exceptional sensitivity, high resolution attainable through the sampling system, and economic efficiency. The quality of single-pixel imaging primarily depends on the performance of the photodetector and the sampling system. Photodetectors based on black phosphorus (BP) exhibit low dark current, high specific detectivity (

Indexed as

artificial intelligenceblack phosphorusmid-infraredphotodetectorssingle-pixel imaging

Identifiers

PMID39975628
PMCPMC11834053

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.