ArticleAdvanced materials (Deerfield Beach, Fla.)2025
Strain-Induced Decoupling Drives Gold-Assisted Exfoliation of Large-Area Monolayer 2D Crystals.
Article in Advanced materials (Deerfield Beach, Fla.), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
6 citing papers in PubMed.
- Halogen-Mediated Polymer-Free Recovery of Pristine MoSSmall methods · 2026Article
- Article
- Miniaturisation of Raman spectroscopy systems: from benchtop to backpocket.Lab on a chip · 2026Review
- Spontaneous Room-Temperature Solid-State Reaction at the MoSACS applied nano materials · 2025Article
- Hybridization Directionality Governs the Interaction Strength between MoSNano letters · 2025Article
- Strain-Induced Decoupling Drives Gold-Assisted Exfoliation of Large-Area Monolayer 2D Crystals.Advanced materials (Deerfield Beach, Fla.) · 2025Article
Corrections and comments
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Authors and funding
8 authors.
Funding
Abstract
Gold-assisted exfoliation (GAE) is a groundbreaking mechanical exfoliation technique that produces centimeter-scale single-crystal monolayers of 2D materials. Such large, high-quality films offer unparalleled advantages over the micron-sized flakes typically produced by conventional exfoliation techniques, significantly accelerating the research and technological advancements in the field of 2D materials. Despite its wide applications, the fundamental mechanism of GAE remains poorly understood. In this study, using MoS₂ on Au as a model system, ultra-low frequency Raman spectroscopy is employed to elucidate how the interlayer interactions within MoS
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