ReviewNano convergence2025
Recent advances in CMOS-compatible synthesis and integration of 2D materials.
Review in Nano convergence, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
5 citing papers in PubMed.
- Antimony-contact MoSMicrosystems & nanoengineering · 2026Article
- Comprehensive Review on Doping Strategies for Two-Dimensional Tungsten Diselenide.International journal of molecular sciences · 2026Review
- Low Temperature MOCVD Synthesis of High-Mobility 2D InSe.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- Stretchable complementary integrated electronics based on elastic dual-type transistors.Science advances · 2025Article
- Applications of Carbon-Based Multivariable Chemical Sensors for Analyte Recognition.Nano-micro letters · 2025Review
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
3 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
The upcoming generation of functional electronics in the era of artificial intelligence, and IoT requires extensive data storage and processing, necessitating further device miniaturization. Conventional Si CMOS technology is struggling to enhance integration density beyond a certain limit to uphold Moore's law, primarily due to performance degradation at smaller dimensions caused by various physical effects, including surface scattering, quantum tunneling, and other short-channel effects. The two-dimensional materials have emerged as highly promising alternatives, which exhibit excellent electrical and mechanical properties at atomically thin thicknesses and show exceptional potential for future CMOS technology. This review article presents the chronological progress made in the development of two-dimensional materials-based CMOS devices with comprehensively discussing the advancements made in material production, device development, associated challenges, and the strategies to address these issues. The future prospects for the use of two-dimensional materials in functional CMOS circuitry are outlooked, highlighting key opportunities and challenges toward industrial adaptation.
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.