ArticleNature materials2025
Low-power 2D gate-all-around logics via epitaxial monolithic 3D integration.
Article in Nature materials, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 20 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
20 citing papers in PubMed.
- Enhancing Quasi-Two-Dimensional Electronic Structure in BiAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Article
- Recent Advances in Two-Dimensional Bismuth Oxysulfide.International journal of molecular sciences · 2026Review
- Biomimetic ferroelectric-semiconductor transistor enables neuronal multisensory integration.Nature communications · 2026Article
- KNature communications · 2026Article
- Post-Moore two-dimensional integrated electronics for angstrom-nodes.National science review · 2026Review
- Mechanistic Insights into High Electron Mobility in 2D BiACS omega · 2026Article
- Gate dielectric stack design for 2D materials-based electronics.Nano convergence · 2026Review
- Challenges and prospects of 2D electronics for future monolithic complementary field-effect transistors.Nature communications · 2026Review
- Atomically sharp heteroepitaxial HfNature communications · 2026Article
- Large-scale gate-all-around MoSNational science review · 2026Article
- Virtualization as a New Scaling Law for Semiconductor Devices Beyond Geometric Scaling.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- Oxide Semiconductor Thin-Film Transistors for Low-Power Electronics.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Review
- BiACS nano · 2025Article
- Wafer-scale uniform epitaxy of transferable 2D single crystals for gate-all-around nanosheet field effect transistors.Nature communications · 2025Article
- A standardized approach to characterize hysteresis in 2D-materials-based transistors for stability benchmarking and performance projection.Nature communications · 2025Article
- Advancing 2D CMOS electronics with high-performance p-type transistors.Nature communications · 2025Article
- Energy Storage, Power Management, and Applications of Triboelectric Nanogenerators for Self-Powered Systems: A Review.Micromachines · 2025Review
- Large-Scale Implementation of Vertical Sidewall and Vertical Multi-Channel WSSmall (Weinheim an der Bergstrasse, Germany) · 2025Article
- Beyond the Silicon Plateau: A Convergence of Novel Materials for Transistor Evolution.Nano-micro letters · 2025Review
Corrections and comments
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Authors and funding
14 authors.
Funding
Abstract
Innovations in device architectures and materials promote transistor miniaturization for improved performance, energy efficiency and integration density. At foreseeable ångström nodes, a gate-all-around (GAA) field-effect transistor based on two-dimensional (2D) semiconductors would provide excellent electrostatic gate controllability to achieve ultimate power scaling and performance delivering. However, a major roadblock lies in the scalable integration of 2D GAA heterostructures with atomically smooth and conformal interfaces. Here we report a wafer-scale multi-layer-stacked single-crystalline 2D GAA configuration achieved with low-temperature monolithic three-dimensional integration, in which high-mobility 2D semiconductor Bi
Identifiers
39953245What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.