Experimental Investigation on the Electrical Properties of DPPT-TT Polymer Field-Effect Transistors Featuring Stair Gate Dielectric.

Hong Zhu, Yi Qian, Yu Yan, Lijian Chen, Quanhua Chen, Huabin Sun, Yong Xu, Guangan Yang

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Article in Polymers, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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5 · Who and what money

Authors and funding

8 authors.

Hong ZhuCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.

Yi QianCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.

Yu YanCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.

Lijian ChenCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.

Quanhua ChenCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.ORCID 0000-0001-9451-4464

Huabin SunCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.ORCID 0000-0002-8465-7151

Yong XuCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.

Guangan YangCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.ORCID 0009-0005-1081-7799

Funding

National Natural Science Foundation of China Grant 62404110Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications under Grant NY223159

6 · The paper itself

Abstract

P-type polymer field-effect transistors (PFETs) achieve wide applications due to their environmental compatibility and inherent flexibility. However, the dielectric in PFETs presents a vulnerability that restricts the development of the advancement of p-type power devices and power integrated circuits with high voltage in power devices. In this work, we provide a novel method that employs p-type polymer DPPT-TT high-voltage PFETs with a stair gate dielectric structure (SGD) at both the source and drain sides. The breakdown voltage of this device is significantly increased, rising from 19 V to 80 V. This improvement is attributable to the SGD structure's ability to reduce the electric field between the source and drain. Although the step gate length (

Indexed as

breakdown voltagePFETspower devicesstair dielectric

Identifiers

PMID39940492

DOI10.3390/polym17030289

PMCPMC11821217

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.