ArticleNanomaterials (Basel, Switzerland)2025
Thin Hydrogenated Amorphous Silicon Carbide Layers with Embedded Ge Nanocrystals.
Article in Nanomaterials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
1 citing paper in PubMed.
- Advances in 2D Photodetectors: Materials, Mechanisms, and Applications.Micromachines · 2025Review
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Authors and funding
4 authors.
Funding
Abstract
The in situ combination of plasma-enhanced chemical vapor deposition (PECVD) and vacuum evaporation in the same vacuum chamber allowed us to integrate germanium nanocrystals (Ge NCs) into hydrogenated amorphous silicon carbide (a-SiC:H) thin films deposited from monomethyl silane diluted with hydrogen. Transmission electron microscopy (TEM) and energy-dispersive X-ray (EDX) spectroscopy were used for the microscopic characterization, while photothermal deflection spectroscopy (PDS) and near-infrared photoluminescence spectroscopy (NIR PL) were for optical characterization. The presence of Ge NCs embedded in the amorphous a-Si:C:H thin films was confirmed by TEM and EDX. The embedded Ge NCs increased optical absorption in the NIR spectral region. The quenching of a-SiC:H NIR PL due to the presence of Ge indicates that the diffusion length of free charge carriers in a-SiC:H is in the range of a few tens of nm, an order of magnitude less than in a-Si:H. The optical properties of a-SiC:H films were degraded after vacuum annealing at 550 °C.
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