Evidence map›Paper›PMID 39940141›Full record

ArticleNanomaterials (Basel, Switzerland)2025

Spectroscopic Ellipsometry and Correlated Studies of AlGaN-GaN HEMTs Prepared by MOCVD.

Yanlian Yang, Yao Liu, Yaoze Li, Manika Tun Nafisa, Zhe Chuan Feng, Lianshan Wang, Jeffrey Yiin, Lingyu Wan, Benjamin Klein, Ian Ferguson and 1 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Yanlian YangResearch Center for Optoelectronic Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, China.
Yao LiuResearch Center for Optoelectronic Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, China.
Yaoze LiResearch Center for Optoelectronic Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, China.
Manika Tun NafisaSouthern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University, Marietta, GA 30060, USA.ORCID 0009-0005-5498-7597
Zhe Chuan FengResearch Center for Optoelectronic Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, China.ORCID 0000-0003-3423-684X
Lianshan WangResearch Center for Optoelectronic Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, China.
Jeffrey YiinSouthern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University, Marietta, GA 30060, USA.
Lingyu WanResearch Center for Optoelectronic Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, China.
Benjamin KleinSouthern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University, Marietta, GA 30060, USA.ORCID 0000-0002-8583-2716
Ian FergusonSouthern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University, Marietta, GA 30060, USA.
Wenhong SunResearch Center for Optoelectronic Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, China.ORCID 0000-0002-2936-767X

Funding

Guangxi Science and Technology Base and Talent Special Project No. AD20238093Guangxi Science and Technology Major Project AA23073018High luminous efficiency and long life DUV LED technology No. AC22080003National Key R&D Program of China 2022YFB3605100 and 2022YFB3605101Natural Science Foundation of Guangxi No. 2021GXNSFAA075005
6 · The paper itself

Abstract

A series of AlGaN/GaN high-electron-mobility transistor (HEMT) structures, with an AlN thin buffer, GaN thick layer and Al

Indexed as

AlGaN/GaNhigh-electron-mobility transistor (HEMT)high-resolution X-ray diffractionmetal–organic chemical vapor depositionphotoluminescenceRaman scatteringspectroscopic ellipsometry

Identifiers

PMID39940141
PMCPMC11820650

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.