Optical Emission Spectroscopy and Gas Kinetics of Picosecond Laser-Induced Chlorine Dissociation for Atomic Layer Etching of Silicon.

Runxuan Li, Matthew H Eliceiri, Jingang Li, Vasileios Korakis, Rundi Yang, Yoonsoo Rho, Brian W Blankenship, Costas P Grigoropoulos

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Article in The journal of physical chemistry. C, Nanomaterials and interfaces, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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8 authors.

Runxuan LiLaser Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, California 94720, United States.

Matthew H EliceiriLaser Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, California 94720, United States.

Jingang LiLaser Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, California 94720, United States.ORCID https://orcid.org/0000-0003-0827-9758

Vasileios KorakisLaser Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, California 94720, United States.

Rundi YangLaser Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, California 94720, United States.ORCID https://orcid.org/0000-0002-2877-939X

Yoonsoo RhoDepartment of Mechanical Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea.

Brian W BlankenshipLaser Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, California 94720, United States.ORCID https://orcid.org/0000-0003-4212-6835

Costas P GrigoropoulosLaser Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, California 94720, United States.ORCID https://orcid.org/0000-0002-8505-4037

Funding

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6 · The paper itself

Abstract

The continuing developments in semiconductor device technologies have prompted the need for advanced nanoscale processing techniques. Laser chemical processing offers significant advantages, including spatial selectivity, high localization, minimal material damage, and fast operation. Pulsed laser-induced dissociation of gas species serves as an essential process step, contributing to doping, etching, and other chemical modifications of semiconductor materials. However, the mechanisms behind the laser-gas interactions and subsequent surface modifications remain elusive. Here, we demonstrate ultraviolet picosecond laser-induced atomic layer etching of silicon in a gaseous chlorine environment, achieving self-limited etching with a precision of 0.93 nm/cycle. Through

Identifiers

PMID39936071

DOI10.1021/acs.jpcc.4c07330

PMCPMC11808783

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