ArticleNature communications2025
Transferrable, wet-chemistry-derived high-k amorphous metal oxide dielectrics for two-dimensional electronic devices.
Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.
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Who cites it
6 citing papers in PubMed.
- Integration of high-κ oxide on 2D semiconductors with carbon-dot monolayer assembly as van der Waals interfacial layer.Nature communications · 2026Article
- Gate dielectric stack design for 2D materials-based electronics.Nano convergence · 2026Review
- Band Engineering and Structural-Geometrical Engineering in 2D/3D van der Waals Heterostructures for Advanced Photodetection and Intelligent Sensing.Nano-micro letters · 2026Review
- van der Waals dielectrics for threshold engineering in two-dimensional field effect transistors.Nature communications · 2026Article
- High-κ dielectric van der Waals integration on 2D semiconductors for three-dimensional complementary logic systems.Nature communications · 2025Article
- Transferrable, wet-chemistry-derived high-k amorphous metal oxide dielectrics for two-dimensional electronic devices.Nature communications · 2025Article
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Authors and funding
23 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Two-dimensional (2D) materials hold transformative potential for next-generation electronics. The integration of high dielectric constant (k) dielectrics onto 2D semiconductors, while maintaining their pristine properties by low-defect-density interfaces, has proven challenging and become one performance bottleneck of their practical implementation. Here, we report a wet-chemistry-based method to fabricate amorphous, transferable high-k (42.9) copper calcium titanate (CCTO) thin films as high-quality, dual-function dielectrics for 2D electronic devices. The chelation-based Pechini approach guarantees uniformity in this perovskite-type complex oxide, while the transferrable feature allows its harmless integration to 2D semiconductors interfacing with a nanogap. The CCTO-gated MoS
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Registered trials
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