Evidence map›Paper›PMID 39920275›Full record

ArticleNature materials2025

Iterative sublattice amorphization facilitates exceptional processability in inorganic semiconductors.

Yuechu Wang, Airan Li, Youran Hong, Tianqi Deng, Pan Deng, Yi Huang, Kai Liu, Jiangwei Wang, Chenguang Fu, Tiejun Zhu

Abstract read
PubMed Publisher
In one paragraph

Article in Nature materials, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 15 papers.

0numbers the graph read from it
0cells of the map it votes in
15citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

15 citing papers in PubMed.

  1. Article
  2. Multifaceted Roles of Tantalum in Promoting the Thermoelectric Performance of MgAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
  3. Article
  4. Article
  5. Article
  6. Article
  7. Article
  8. Article
  9. Room-temperature plasticity in AgNature communications · 2026
    Article
  10. Substantial planar plastic anisotropy in inorganic MgProceedings of the National Academy of Sciences of the United States of America · 2025
    Article
  11. Article
  12. Article
  13. Article
  14. Review
  15. Synthesis and thermal stability of topological semimetalScience and technology of advanced materials · 2025
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors.

Yuechu Wang *State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.ORCID http://orcid.org/0000-0003-1408-2636
Airan Li *State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.ORCID http://orcid.org/0000-0002-1683-4347
Youran HongState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.
Tianqi DengState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China. dengtq@zju.edu.cn.ORCID http://orcid.org/0000-0002-9826-7138
Pan DengState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.
Yi HuangState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.ORCID http://orcid.org/0000-0002-8620-8456
Kai LiuState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.
Jiangwei WangState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.ORCID http://orcid.org/0000-0003-1191-0782
Chenguang FuState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China. chenguang_fu@zju.edu.cn.ORCID http://orcid.org/0000-0002-9545-3277
Tiejun ZhuState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China. zhutj@zju.edu.cn.ORCID http://orcid.org/0000-0002-3868-0633

Funding

National Natural Science Foundation of China (National Science Foundation of China) 92163203National Natural Science Foundation of China (National Science Foundation of China) U23A20553Natural Science Foundation of Zhejiang Province (Zhejiang Provincial Natural Science Foundation) LD22E020005
6 · The paper itself

Abstract

Cold-forming processing is a crucial means for the cost-effective production of metal and alloy products. However, this process often results in catastrophic fracture when applied to most inorganic semiconductors owing to their inherent brittleness. Here we report the unique room-temperature plastic deformation mechanism involving sublattice amorphization coupled with Ag-ion diffusion in inorganic semiconductors Ag

Identifiers

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.