Evidence map›Paper›PMID 39885137›Full record

ArticleNature communications2025

Observation of ultraviolet photothermoelectric bipolar impulse in gallium-based heterostructure nanowires.

Jinjie Zhu, Qing Cai, Pengfei Shao, Shengjie Zhang, Haifan You, Hui Guo, Jin Wang, Junjun Xue, Bin Liu, Hai Lu and 3 more

Abstract read
In one paragraph

Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

13 authors.

Jinjie ZhuKey Laboratory of Advanced Photonic and Electronic Materials, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.ORCID http://orcid.org/0000-0002-5605-8768
Qing CaiKey Laboratory of Advanced Photonic and Electronic Materials, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China. caiqing@nju.edu.cn.ORCID http://orcid.org/0000-0002-4625-4714
Pengfei ShaoKey Laboratory of Advanced Photonic and Electronic Materials, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.
Shengjie ZhangKey Laboratory of Advanced Photonic and Electronic Materials, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.
Haifan YouKey Laboratory of Advanced Photonic and Electronic Materials, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.
Hui GuoKey Laboratory of Advanced Photonic and Electronic Materials, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.
Jin WangCollege of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.ORCID http://orcid.org/0000-0002-9881-7208
Junjun XueCollege of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
Bin LiuKey Laboratory of Advanced Photonic and Electronic Materials, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.ORCID http://orcid.org/0000-0002-9495-6809
Hai LuKey Laboratory of Advanced Photonic and Electronic Materials, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.ORCID http://orcid.org/0000-0002-9835-6763
Youdou ZhengKey Laboratory of Advanced Photonic and Electronic Materials, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.
Rong ZhangKey Laboratory of Advanced Photonic and Electronic Materials, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.ORCID http://orcid.org/0000-0003-0015-6331
Dunjun ChenKey Laboratory of Advanced Photonic and Electronic Materials, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China. djchen@nju.edu.cn.

Funding

National Natural Science Foundation of China (National Science Foundation of China) 62104095National Natural Science Foundation of China (National Science Foundation of China) 62474089National Natural Science Foundation of China (National Science Foundation of China) U2141241
6 · The paper itself

Abstract

The incorporation of thermal dynamics alongside conventional optoelectronic principles holds immense promise for advancing technology. Here, we introduce a GaON/GaN heterostructure-nanowire ultraviolet electrochemical cell of observing a photothermoelectric bipolar impulse characteristic. By leveraging the distinct thermoelectric properties of GaON/GaN, rapid generation of hot carriers establishes bidirectional instantaneous gradients in concentration and temperature within the nanoscale heterostructure via light on/off modulation. The thermoelectromotive force induced by these gradients, combined with the type-II heterojunction band structure, facilitates carrier transport, resulting in transient bidirectional photothermal currents. The device achieves exceptional responsivity (17.1 mA/W) and remarkably fast speed (8.8 ms) at 0 V, surpassing existing semiconductor electrochemical cells. This bipolar ultraviolet impulse detection mode harnesses light-induced heat for electricity generation, enabling innovative bidirectional encryption communication capabilities. Anticipated applications encompass future sensing, switchable light imaging, and energy conversion systems, thereby laying a foundation for diverse optoelectronic technological advancements.

Identifiers

PMID39885137
PMCPMC11782623

What OpenQuestion holds

Textmetadata
LicenceCC BY-NC-ND
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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.