ReviewLight, science & applications2025
Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect.
Review in Light, science & applications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 7 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
7 citing papers in PubMed.
- Weak polarization electric field Ⅲ-N LEDs on polar plane with enhanced efficiency and strong lateral carrier confinement.Light, science & applications · 2026Article
- The Origin of Efficiency in III-Nitride Micro-Light-Emitting Diodes.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Minimizing interface defects and enhancing optical brightness of µLEDs through polymeric encapsulants.Communications engineering · 2026Article
- Wafer-Bonded AlGaInP Red LEDs with Suppressed S-Droop through Surface Sulfidation.ACS applied materials & interfaces · 2026Article
- Molecular dynamics simulation of atomic layer etching for sidewall damage recovery in GaN-based structures.Scientific reports · 2026Article
- Observation of Interlayer Excitons in Mixed-Dimensional MoSACS applied materials & interfaces · 2025Article
- High-Performance GaN-Based Green Flip-Chip Mini-LED with Lattice-Compatible AlN Passivation Layer.Nanomaterials (Basel, Switzerland) · 2025Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
8 authors.
Funding
Abstract
The size of InGaN micro-LEDs is continuously decreasing to meet the demands of various emerging applications, especially in tiny micro-displays such as AR/VR. However, the conventional pixel definition based on plasma etching significantly damages the mesa sidewalls, leading to a severe reduction in efficiency as the micro-LED size decreases. This seriously impedes the development and application of micro-LEDs. In this work, we comprehensively explain the origin of micro-LED sidewall effects and corresponding physical models. Subsequently, we systematically review recent progress in micro-LED fabrication aiming at suppressing sidewall effects. Furthermore, we discuss advancements in micro-LED fabrication with "damage-free" techniques, which hold the potential to fundamentally address the issue of plasma damage in the micro-LED process. We believe this review will deepen the understanding of micro-LED sidewall effects and provide a better insight into the latest associated fabrication technologies for high-efficient InGaN micro-LEDs.
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.