Evidence map›Paper›PMID 39859777›Full record

ArticleMaterials (Basel, Switzerland)2025

All-Fiber Micro-Ring Resonator Based p-Si/n-ITO Heterojunction Electro-Optic Modulator.

Yihan Zhu, Ziqian Wang, Xing Chen, Honghai Zhu, Lizhuo Zhou, Yujie Zhou, Yi Liu, Yule Zhang, Xilin Tian, Shuo Sun and 4 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Materials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

14 authors.

Yihan ZhuState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
Ziqian WangState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
Xing ChenSchool of Electronic Engineering, Chengdu Technological University, Chengdu 611730, China.
Honghai ZhuState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
Lizhuo ZhouState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
Yujie ZhouState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
Yi LiuState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
Yule ZhangState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
Xilin TianState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
Shuo SunState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.ORCID 0000-0002-7178-0564
Jianqing LiSchool of Computer Science and Engineering, Macau University of Science and Technology, Macau 999077, China.ORCID 0000-0002-6768-1483
Ke JiangState Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.
Han ZhangState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
Huide WangState Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.ORCID 0000-0001-8379-8238

Funding

Basic and Applied Basic Research Foundation of Guangdong Province-Regional Joint Fund-Key Projects 2022B1515120012Central Military Commission Science and Technology Committee Project 2022-JCJQ-JJ-0886Department of Education of Guangdong Province No. 2022ZDZX1023Key Projects (B) of the Stability Support Program for Shenzhen Higher Education Institutions No. 20220810151419001LingChuang Research Project of China National Nuclear Corporation No. CNNC-LCKY-202268National Natural Science Foundation of China 62405195Natural Science Foundation of Sichuan Province 2022NSFSC1800Project supported by State Key Laboratory of Luminescence and Applications SKLA-2020-03Research Team Cultivation Program of ShenZhen University Grant No. 2023QNT008Science and Technology Innovation Commission of Shenzhen KCXFZ20211020163814021Shenzhen Science and Technology Program KCXFZ20230731093359004State Key Research Development Program of China Grant No. YS2022YFB3200011The Hangzhou Normal University "Project to the summit" chemical discipline, the Ministry of Education Key Laboratory Open Scientific Projects Fund KFJJ2023007
6 · The paper itself

Abstract

With the rapid advancement of information technology, the data demands in transmission rates, processing speed, and storage capacity have been increasing significantly. However, silicon electro-optic modulators, characterized by their weak electro-optic effect, struggle to balance modulation efficiency and bandwidth. To overcome this limitation, we propose an electro-optic modulator based on an all-fiber micro-ring resonator and a p-Si/n-ITO heterojunction, achieving high modulation efficiency and large bandwidth. ITO is introduced in this design, which exhibits an ε-near-zero (ENZ) effect in the communication band. The real and imaginary parts of the refractive index of ITO undergo significant changes in response to variations in carrier concentration induced by the reverse bias voltage, thereby enabling efficient electro-optic modulation. Additionally, the design of the all-fiber micro-ring eliminates coupling losses associated with spatial optical-waveguide coupling, thereby resolving the high insertion loss of silicon waveguide modulators and the challenges of integrating MZI modulation structures. The results demonstrate that this modulator can achieve significant phase shifts at low voltages, with a modulation efficiency of up to 3.08 nm/V and a bandwidth reaching 82.04 GHz, indicating its potential for high-speed optical chip applications.

Indexed as

all-fiber micro-ring resonatorelectro-optic modulatorheterojunctionITOoptical chip

Identifiers

PMID39859777
PMCPMC11766889

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