Evidence map›Paper›PMID 39858740›Full record

ArticleMicromachines2025

Simulation and Experimental Study of the Single-Pulse Femtosecond Laser Ablation Morphology of GaN Films.

Mingyuan Wang, Tong Zhang, Yanping Yuan, Zhiyong Wang, Yanlei Liu, Lin Chen

Abstract read
In one paragraph

Article in Micromachines, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Mingyuan WangSchool of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing 100124, China.
Tong ZhangSchool of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing 100124, China.ORCID 0000-0003-0444-308X
Yanping YuanSchool of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing 100124, China.
Zhiyong WangSchool of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing 100124, China.
Yanlei LiuHenan Key Laboratory of Infrared Spectrum Measures, Applications College of Physics, Henan Normal University, Xinxiang 453007, China.
Lin ChenSchool of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing 100124, China.

Funding

National Nature Science Foundation of China 52105423R&D Program of Beijing Municipal Education Commission KM202210005004
6 · The paper itself

Abstract

Gallium nitride (GaN) exhibits distinctive physical and chemical properties that render it indispensable in a multitude of electronic and optoelectronic devices. Given that GaN is a typical hard and brittle material that is difficult to machine, femtosecond laser technology provides an effective and convenient tool for processing such materials. However, GaN undergoes complex physical and chemical changes during high-power ablation, which poses a challenge to high-precision processing with controllable geometry. In this study, the quantitative relationship between the parameters of a single-pulse femtosecond laser and GaN ablation morphology was investigated using isotherm distribution. A multiphysics model using COMSOL Multiphysics

Indexed as

ablation morphologyfemtosecond laserGaN filmmultiphysics model

Identifiers

PMID39858740
PMCPMC11767518

What OpenQuestion holds

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LicenceCC BY
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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.