ArticleMicromachines2025
Simulation and Experimental Study of the Single-Pulse Femtosecond Laser Ablation Morphology of GaN Films.
Article in Micromachines, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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6 authors.
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Abstract
Gallium nitride (GaN) exhibits distinctive physical and chemical properties that render it indispensable in a multitude of electronic and optoelectronic devices. Given that GaN is a typical hard and brittle material that is difficult to machine, femtosecond laser technology provides an effective and convenient tool for processing such materials. However, GaN undergoes complex physical and chemical changes during high-power ablation, which poses a challenge to high-precision processing with controllable geometry. In this study, the quantitative relationship between the parameters of a single-pulse femtosecond laser and GaN ablation morphology was investigated using isotherm distribution. A multiphysics model using COMSOL Multiphysics
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