Evidence map›Paper›PMID 39858657›Full record

ArticleMicromachines2024

X-Ray Performance of SiC NPN Radiation Detector.

Jing Wang, Leidang Zhou, Liang Chen, Silong Zhang, Fangbao Wang, Tingting Fan, Zhuo Chen, Song Bai, Xiaoping Ouyang

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Micromachines, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors.

Jing WangSchool of Microelectronics, Xidian University, Xi'an 710071, China.ORCID 0000-0003-0572-1918
Leidang ZhouSchool of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.ORCID 0000-0003-3052-5556
Liang ChenNorthwest Institute of Nuclear Technology, Xi'an 710024, China.
Silong ZhangSchool of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China.
Fangbao WangNorthwest Institute of Nuclear Technology, Xi'an 710024, China.
Tingting FanSchool of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.
Zhuo ChenSchool of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.
Song BaiState Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, Nanjing Electronic Devices Institute, Nanjing 210016, China.ORCID 0009-0009-6376-2399
Xiaoping OuyangNorthwest Institute of Nuclear Technology, Xi'an 710024, China.

Funding

National Natural Science Foundation of China 12305204National Natural Science Foundation of China 62204198State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology 2413S121
6 · The paper itself

Abstract

In this paper, a silicon carbide (SiC) phototransistor based on an open-base structure was fabricated and used as a radiation detector. In contrast to the exposed and thin sensitive region of traditional photo detectors, the sensitive region of the radiation detector was much thicker (30 μm), ensuring the high energy deposition of radiation particles. The response properties of the fabricated SiC npn radiation detector were characterized by high-energy X-ray illumination with a maximum X-ray photon energy of 30 keV. The SiC npn detector featured stable and clear response to the X-ray within 0.0766 Gy∙s

Indexed as

bipolar transistorgainradiation detectionsemiconductor detector

Identifiers

PMID39858657
PMCPMC11767698

What OpenQuestion holds

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LicenceCC BY
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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.