ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2025
Direct Observation of Substantial Phonon Nonequilibrium Near Nanoscale Hotspots in Gallium Nitride.
Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
2 citing papers in PubMed.
- Direct Observation of Suppressed Optical-Acoustic Phonon Energy Coupling in Supported SWCNT at Cryogenic Temperatures.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
- Direct Observation of Substantial Phonon Nonequilibrium Near Nanoscale Hotspots in Gallium Nitride.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
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Authors and funding
7 authors.
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Abstract
Phonon modal nonequilibrium is believed to widely exist around nanoscale hotspots, which can significantly affect the performance of nano-electronic and optoelectronic devices. However, such a phenomenon has not been explicitly observed in 3D device semiconductors at the nanoscale. Here, by employing a tip-enhanced Raman thermal measurement approach, substantial phonon nonequilibrium in gallium nitride near sub-10 nm laser-excited hotspots is directly revealed for the first time. As further evidence, quantitative agreements between measurements and accurate first-principles-based phonon Boltzmann transport equation calculations are obtained. The large nonequilibrium is attributed to the strong Fröhlich coupling of electrons with longitudinal optical phonons and the large acoustic-optical phonon frequency gap in gallium nitride, which is further demonstrated in other common III-V semiconductors. This work establishes a viable approach for understanding nanoscale nonequilibrium phonon transport and can potentially benefit the future modulation of hot carrier dynamics.
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