Evidence map›Paper›PMID 39852754›Full record

ArticleNanomaterials (Basel, Switzerland)2025

Mid-Infrared High-Power InGaAsSb/AlGaInAsSb Multiple-Quantum-Well Laser Diodes Around 2.9 μm.

Hongguang Yu, Chengao Yang, Yihang Chen, Jianmei Shi, Juntian Cao, Zhengqi Geng, Zhiyuan Wang, Haoran Wen, Enquan Zhang, Yu Zhang and 5 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

15 authors.

Hongguang YuKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.ORCID 0009-0000-5510-2619
Chengao YangKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.ORCID 0000-0003-4426-6807
Yihang ChenKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Jianmei ShiKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.ORCID 0009-0000-6305-8996
Juntian CaoKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Zhengqi GengKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.ORCID 0009-0007-8915-4207
Zhiyuan WangKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Haoran WenInternational Quantum Academy, Shenzhen 518048, China.
Enquan ZhangKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.ORCID 0009-0002-5356-2851
Yu ZhangKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Hao TanInternational Quantum Academy, Shenzhen 518048, China.
Donghai WuKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Yingqiang XuKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Haiqiao NiKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Zhichuan NiuKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.ORCID 0000-0002-9566-6635

Funding

Beijing Nova Program 20240484621the "Announce the list and take charge" of the major special plan of science and technology in Shanxi Province 202201030201009the Chinese Academy of Sciences Project for Young Scientists in Basic Research YSBR-112the Innovation Program for Quantum Science and Technology 2021ZD0300801the National Natural Science Foundation of China 62204238
6 · The paper itself

Abstract

Antimonide laser diodes, with their high performance above room temperature, exhibit significant potential for widespread applications in the mid-infrared spectral region. However, the laser's performance significantly degrades as the emission wavelength increases, primarily due to severe quantum-well hole leakage and significant non-radiative recombination. In this paper, we put up an active region with a high valence band offset and excellent crystalline quality with high luminescence to improve the laser's performance. The miscibility gap of the InGaAsSb alloy was systematically investigated by calculating the critical temperatures based on the delta lattice parameter model. As the calculation results show, In

Indexed as

antimonide laser diodesinterdiffusion processmid-infrared emittersmiscibility gapmolecular epitaxy beam

Identifiers

PMID39852754
PMCPMC11767628

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.