Evidence map›Paper›PMID 39846459›Full record

ArticleNano letters2025

Ultranarrow Semiconductor WS

Md Anamul Hoque, Alexander Yu Polyakov, Battulga Munkhbat, Konstantina Iordanidou, Abhay V Agrawal, Andrew B Yankovich, Sameer K Mallik, Bing Zhao, Richa Mitra, Alexei Kalaboukhov and 6 more

Abstract read
In one paragraph

Article in Nano letters, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.

0numbers the graph read from it
0cells of the map it votes in
3citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

3 citing papers in PubMed.

  1. Article
  2. Article
  3. Oxide induced degradation in MoSNPJ 2D materials and applications · 2026
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

16 authors.

Md Anamul HoqueDepartment of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden.ORCID 0000-0002-2117-7177
Alexander Yu PolyakovDepartment of Physics, Chalmers University of Technology, SE-41296 Göteborg, Sweden.ORCID 0000-0002-3781-1881
Battulga MunkhbatDepartment of Physics, Chalmers University of Technology, SE-41296 Göteborg, Sweden.ORCID 0000-0002-1923-0960
Konstantina IordanidouDepartment of Physics, Chalmers University of Technology, SE-41296 Göteborg, Sweden.ORCID 0000-0003-4696-8204
Abhay V AgrawalDepartment of Physics, Chalmers University of Technology, SE-41296 Göteborg, Sweden.
Andrew B YankovichDepartment of Physics, Chalmers University of Technology, SE-41296 Göteborg, Sweden.ORCID 0000-0002-1772-6778
Sameer K MallikDepartment of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden.ORCID 0000-0001-5819-730X
Bing ZhaoDepartment of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden.ORCID 0000-0002-5560-6750
Richa MitraDepartment of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden.
Alexei KalaboukhovDepartment of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden.ORCID 0000-0003-2939-6187
Eva OlssonDepartment of Physics, Chalmers University of Technology, SE-41296 Göteborg, Sweden.ORCID 0000-0002-3791-9569
Sergey KubatkinDepartment of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden.ORCID 0000-0001-8551-9247
Julia WiktorDepartment of Physics, Chalmers University of Technology, SE-41296 Göteborg, Sweden.ORCID 0000-0003-3395-1104
Samuel Lara AvilaDepartment of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden.ORCID 0000-0002-8331-718X
Timur O ShegaiDepartment of Physics, Chalmers University of Technology, SE-41296 Göteborg, Sweden.ORCID 0000-0002-4266-3721
Saroj P DashDepartment of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden.ORCID 0000-0001-7931-4843

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Semiconducting transition metal dichalcogenides (TMDs) have attracted significant attention for their potential to develop high-performance, energy-efficient, and nanoscale electronic devices. Despite notable advancements in scaling down the gate and channel length of TMD field-effect transistors (FETs), the fabrication of sub-30 nm narrow channels and devices with atomic-scale edge control still poses challenges. Here, we demonstrate a crystallography-controlled nanostructuring technique to fabricate ultranarrow tungsten disulfide (WS

Indexed as

2D semiconductorscrystallographically controlled nanostructuringdiodesfield-effect transistorsnanoribbonTMDstransition metal dichalcogenidesWS2zigzag edges

Identifiers

PMID39846459
PMCPMC11803707

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.