ArticleNature communications2025
Step-necking growth of silicon nanowire channels for high performance field effect transistors.
Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 8 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
8 citing papers in PubMed.
- Solution-Shearing Self-Assembly of Hydrothermally Synthesized Tellurium Nanowires for Fabricating Field-Effect Transistors with Wafer-Scale Uniformity.Nanomaterials (Basel, Switzerland) · 2026Article
- DNAzyme assisted self-feedback electrochemiluminescence signal amplification for the detection of miRNA-622.Mikrochimica acta · 2026Article
- Production of Tellurene Nanoribbons.Small methods · 2026Article
- Lithography-free, site-controlled germanium quantum dots in silicon nanowires for single-hole transistors operating up to 50 K.Science advances · 2026Article
- Non-Invasive Brain-Computer Interfaces: Converging Frontiers in Neural Signal Decoding and Flexible Bioelectronics Integration.Nano-micro letters · 2026Review
- Stable, Step-Guided Growth of Planar Germanium Nanowires at 200 °C via the In-Plane Solid-Liquid-Solid Mechanism.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Epitaxial Growth Control of Crystalline Morphology and Electronic Transport in InSb Nanowires: Competition Between Axial and Radial Growth Modes.Nanomaterials (Basel, Switzerland) · 2025Article
- Article
Corrections and comments
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Authors and funding
6 authors.
Funding
Abstract
Ultrathin silicon nanowires (diameter <30 nm) with strong electrostatic control are ideal quasi-1D channel materials for high-performance field effect transistors, while a short channel is desirable to enhance driving current. Typically, the patterning of such delicate channels relies on high-precision lithography, which is not applicable for large area electronics. In this work, we demonstrate that ultrathin and short silicon nanowires channels can be created through a local-curvature-modulated catalytic growth, where a planar silicon nanowires is directed to jump over a crossing step. During the jumping dynamic, the leading droplet undergoes significant stretching, producing a short necking segment of <100 nm in length, with a reduced diameter from approximately 45 nm to <25 nm. Compared to the FETs with uniform silicon nanowire channels, our step-necked silicon nanowire FETs exhibit substantially enhanced on/off current ratio I
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.