High-Performance Edge-Contact Monolayer Molybdenum Disulfide Transistors.

Jiankun Xiao, Xiong Xiong, Xinhang Shi, Shiyuan Liu, Shenwu Zhu, Yue Zhang, Ru Huang, Yanqing Wu

Abstract read

In one paragraph

Article in Research (Washington, D.C.), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it

0cells of the map it votes in

1citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

Challenges and prospects of 2D electronics for future monolithic complementary field-effect transistors.Nature communications · 2026
Review

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

Jiankun XiaoSchool of Integrated Circuits and Beijing Advanced Innovation Center for Integrated Circuits, Peking University, Beijing 100871, China.

Xiong XiongSchool of Integrated Circuits and Beijing Advanced Innovation Center for Integrated Circuits, Peking University, Beijing 100871, China.ORCID https://orcid.org/0000-0003-2774-9006

Xinhang ShiWuhan National High Magnetic Field Center and School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China.

Shiyuan LiuSchool of Integrated Circuits and Beijing Advanced Innovation Center for Integrated Circuits, Peking University, Beijing 100871, China.

Shenwu ZhuWuhan National High Magnetic Field Center and School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China.

Yue ZhangAcademy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China.

Ru HuangSchool of Integrated Circuits and Beijing Advanced Innovation Center for Integrated Circuits, Peking University, Beijing 100871, China.

Yanqing WuSchool of Integrated Circuits and Beijing Advanced Innovation Center for Integrated Circuits, Peking University, Beijing 100871, China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Edge contact is essential for achieving the ultimate device pitch scaling of stacked nanosheet transistors with monolayer 2-dimensional (2D) channels. However, due to large edge-contact resistance between 2D channels and contact metal, there is currently a lack of high-performance edge-contact device technology for 2D material channels. Here, we report high-performance edge-contact monolayer molybdenum disulfide (MoS

Identifiers

PMID39830365

DOI10.34133/research.0593

PMCPMC11739435

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.