ArticleLight, science & applications2025
Realizing low voltage-driven bright and stable quantum dot light-emitting diodes through energy landscape flattening.
Article in Light, science & applications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
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Who cites it
5 citing papers in PubMed.
- Synthesis of Tris(Dimethylamino)Phosphine-Based InP Quantum Dots and Their Application in Light-Emitting Diodes: Progress and Perspectives.Exploration (Beijing, China) · 2026Review
- Selective radial thickness growth of compositionally graded shells on colloidal quantum rods for more efficient light-emitting diodes.Nature communications · 2026Article
- Enhancing luminescence of QD thin films, polymer composite films, and LED devices by nanostructures.Innovation (Cambridge (Mass.)) · 2026Review
- Manipulating charge transfer dynamics and stabilizing lead bromide octahedra for efficient blue perovskite light-emitting diodes.Nature communications · 2026Article
- Rigid crosslinker-assisted nondestructive direct photolithograph for patterned QLED displays.Light, science & applications · 2025Article
Corrections and comments
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Authors and funding
13 authors.
Funding
Abstract
Solution-processed quantum dot light-emitting diodes (QLEDs) hold great potential as competitive candidates for display and lighting applications. However, the serious energy disorder between the quantum dots (QDs) and hole transport layer (HTL) makes it challenging to achieve high-performance devices at lower voltage ranges. Here, we introduce "giant" fully alloy CdZnSe/ZnSeS core/shell QDs (size ~ 19 nm) as the emitting layer to build high-efficient and stable QLEDs. The synthesized CdZnSe-based QDs reveal a decreased ground-state band splitting, shallow valence band maximum, and improved quasi-Fermi level splitting, which effectively flatten the energy landscape between the QD layer and hole transport layer. The higher electron concentration and accelerated hole injection significantly promote the carrier radiative recombination dynamics. Consequently, CdZnSe-based device exhibits a high power conversion efficiency (PCE) of 27.3% and an ultra-low efficiency roll-off, with a high external quantum efficiency (EQE) exceeding 25% over a wide range of low driving voltages (1.8-3.0 V) and low heat generation. The record-high luminance levels of 1,400 and 8,600 cd m
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.