Evidence map›Paper›PMID 39815066›Full record

ArticleNature nanotechnology2025

Ferroelectricity with concomitant Coulomb screening in van der Waals heterostructures.

Ruirui Niu, Zhuoxian Li, Xiangyan Han, Zhuangzhuang Qu, Qianling Liu, Zhiyu Wang, Chunrui Han, Chunwen Wang, Yangliu Wu, Chendi Yang and 15 more

Abstract read
PubMed Publisher
In one paragraph

Article in Nature nanotechnology, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 10 papers.

0numbers the graph read from it
0cells of the map it votes in
10citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

10 citing papers in PubMed.

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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

25 authors.

Ruirui Niu *State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, China.
Zhuoxian Li *State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, China.
Xiangyan Han *State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, China.
Zhuangzhuang Qu *State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, China.
Qianling LiuState Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, China.
Zhiyu WangState Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, China.
Chunrui HanInstitute of Microelectronics, Chinese Academy of Sciences, Beijing, China. hanchunrui@ime.ac.cn.ORCID http://orcid.org/0000-0002-6257-1103
Chunwen WangSchool of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, China.
Yangliu WuNational Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China.
Chendi YangLaboratory of Advanced Materials, Department of Materials Science, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Fudan University, Shanghai, China.
Ming LvSchool of Physical Science and Technology, ShanghaiTech University, Shanghai, China.
Kaining YangState Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan, China.
Kenji WatanabeNational Institute for Materials Science, Tsukuba, Japan.ORCID http://orcid.org/0000-0003-3701-8119
Takashi TaniguchiNational Institute for Materials Science, Tsukuba, Japan.ORCID http://orcid.org/0000-0002-1467-3105
Kaihui LiuState Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, China.ORCID http://orcid.org/0000-0002-8781-2495
Jinhai MaoSchool of Physical Sciences and CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing, China.ORCID http://orcid.org/0000-0002-9034-3642
Wu ShiState Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China.ORCID http://orcid.org/0000-0002-6458-4776
Renchao CheLaboratory of Advanced Materials, Department of Materials Science, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Fudan University, Shanghai, China.ORCID http://orcid.org/0000-0002-6583-7114
Wu ZhouSchool of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, China.ORCID http://orcid.org/0000-0002-6803-1095
Jiamin XueSchool of Physical Science and Technology, ShanghaiTech University, Shanghai, China.ORCID http://orcid.org/0000-0002-1892-1743
Menghao WuSchool of Physics, Huazhong University of Science and Technology, Wuhan, China.ORCID http://orcid.org/0000-0002-1683-6449
Bo PengNational Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China. bo_peng@uestc.edu.cn.ORCID http://orcid.org/0000-0001-9411-716X
Zheng Vitto HanState Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan, China. vitto.han@gmail.com.ORCID http://orcid.org/0000-0001-5721-6206
Zizhao GanState Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, China.
Jianming LuState Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, China. jmlu@pku.edu.cn.ORCID http://orcid.org/0000-0002-1558-4040

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Interfacial ferroelectricity emerges in non-centrosymmetric heterostructures consisting of non-polar van der Waals (vdW) layers. Ferroelectricity with concomitant Coulomb screening can switch topological currents or superconductivity and simulate synaptic response. So far, it has only been realized in bilayer graphene moiré superlattices, posing stringent requirements to constituent materials and twist angles. Here we report ferroelectricity with concomitant Coulomb screening in different vdW heterostructures free of moiré interfaces containing monolayer graphene, boron nitride (BN) and transition metal chalcogenide layers. We observe a ferroelectric hysteretic response in a BN/monolayer graphene/BN, as well as in BN/WSe

Identifiers

PMID39815066

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.