ArticleScientific reports2025
A promising high-sensitive 1D photonic crystal magnetic field sensor based on the coupling of Fano\Tamm resonance in far IR region.
Article in Scientific reports, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. An erratum has been issued. Cited by 3 papers.
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Who cites it
3 citing papers in PubMed.
- High-performance Terfenol-D/PMMA phononic crystal sensor for tunable acoustic wave control and magnetic field detection.Scientific reports · 2025Article
- The role of Faraday effect on the one-dimensional n-doped Si photonic crystals towards magnetic field sensing applications.Scientific reports · 2025Article
- Analysis of Personalized Cardiovascular Drug Therapy: From Monitoring Technologies to Data Integration and Future Perspectives.Biosensors · 2025Review
Corrections and comments
- Erratum issued
Authors and funding
6 authors.
Funding
Abstract
This paper presents a novel investigation of a magnetic sensor that employs Fano/Tamm resonance within the photonic band gap of a one-dimensional crystal structure. The design incorporates a thin layer of gold (Au) alongside a periodic arrangement of Tantalum pentoxide ([Formula: see text]) and Cesium iodide ([Formula: see text]) in the configuration [Formula: see text]. We utilized the transfer matrix method in conjunction with the Drude model to analyze the formation of Fano/Tamm states and the permittivity of the metallic layer, respectively. These states can be manipulated based on the left-handed and right-handed circular polarization of electromagnetic waves, along with an applied magnetic field. Several key parameters were optimized, including material selection, layer thickness, unit cell periodicity, and the angle of incidence, to enhance the sensor performance. Additionally, we investigated how variations in magnetic field strength influence the position of Fano/Tamm resonance in the reflectivity spectrum of the interacting electromagnetic waves within a specific wavelength range of 60 μm to 140 μm. The proposed sensor displays good performance investigated by calculating several parameters like, sensitivity, figure of merit, quality factor and resolution. One of them, it shows a maximum sensitivity of 57 nm/Tesla within a magnetic field strength of 20 to 140 Tesla, positioning it as a promising candidate for various applications in magnetic field measurement and telecommunications, particularly in the unique far-infrared region.
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