ArticleMolecules (Basel, Switzerland)2024
Advancing Graphene Synthesis: Low-Temperature Growth and Hydrogenation Mechanisms Using Plasma-Enhanced Chemical Vapor Deposition.
Article in Molecules (Basel, Switzerland), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
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Who cites it
3 citing papers in PubMed.
- Low-Temperature Deposition and Material Characterization of Hydrogenated Graphene Oxide Thin Films on Copper Substrates.ACS omega · 2026Article
- Low-Temperature Direct PECVD Synthesis of Graphene on Si(100) with Increased Methane Flow: Structure and Photoelectric Properties.Micromachines · 2026Article
- Effect of Synthesis Conditions on Graphene Directly Grown on SiONanomaterials (Basel, Switzerland) · 2025Article
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5 authors.
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Abstract
This study explores the low-temperature synthesis of graphene using plasma-enhanced chemical vapor deposition (PECVD), emphasizing the optimization of process parameters to achieve controlled growth of pristine and hydrogenated graphene. Graphene films were synthesized at temperatures ranging from 700 °C to as low as 400 °C by varying methane (25-100 sccm) and hydrogen (25-100 sccm) gas flow rates under 10-20 mBar pressures. Raman spectroscopy revealed structural transitions: pristine graphene grown at 700 °C exhibited strong 2D peaks with an I(2D)/I(G) ratio > 2, while hydrogenated graphene synthesized at 500 °C showed increased defect density with an I(D)/I(G) ratio of ~1.5 and reduced I(2D)/I(G) (~0.8). At 400 °C, the material transitioned to a highly hydrogenated amorphous carbon film, confirmed by photoluminescence (PL) in the Raman spectra. Atomic force microscopy (AFM) showed pristine graphene with a root mean square roughness (
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